IKW25N120H3

Gate-Emitter Leakage Current:600 nA
Product Category:IGBT Transistors
Mounting Style:Through Hole
Continuous Collector Current at 25 C:50 A
Pd - Power Dissipation:326 W
Collector- Emitter Voltage VCEO Max:1200 V
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Location: Hong kong China
Address: Room 808, Tower A, 8-10 Wah Sing Street, Kwai Chung, Hong Kong
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The IKW25N120H3,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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IKW25N120H3

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