PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching
Certification:new & original
Model Number:2SC5707
Minimum Order Quantity:20
Delivery Time:1 day
Payment Terms:T/T, Western Union,Paypal
Place of Origin:original factory
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Shenzhen China
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Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details
PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching
Applications
• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash
Features
• Adoption of FBET and MBIT processes.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.
Specifications ( ) : 2SA2040
| Parameter | Symbol | Conditions | Ratings | Unit |
| Collector-to-Base Voltage | VCBO | -- | (--50)100 | V |
| Collector-to-Emitter Voltage | VCES | -- | (--50)100 | V |
| Collector-to-Emitter Voltage | VCEO | -- | (--)50 | V |
| Emitter-to-Base Voltage | VEBO | -- | (--)6 | V |
| Collector Current | IC | -- | (--)8 | A |
| Collector Current (Pulse) | ICP | -- | (--)11 | A |
| Base Current | IB | -- | (--)2 | A |
| Collector Dissipation | PC | -- Tc=25°C | 1.0 15 | W W |
| Junction Temperature | Tj | -- | 150 | °C |
| Storage Temperature | Tstg | -- | --55 to +150 | °C |
| Parameter | Symbol | Conditions | min. | Typ. | max. | unit |
| Collector Cutoff Current | ICBO | VCB=(--)40V, IE=0A | -- | -- | (--)0.1 | µA |
| Emitter Cutoff Current | IEBO | VEB=(--)4V, IC=0A | -- | -- | (--)0.1 | µA |
| DC Current Gain | hFE | VCE=(--)2V, IC=(--)500mA | 200 | -- | 560 | -- |
| Gain-Bandwidth Product | fT | VCE=(--)10V, IC=(--)500mA | -- | (290)330 | -- | MHz |
| Output Capacitance | Cob | VCB=(--)10V, f=1MHz | -- | (50)28 | -- | pF |
| Collector-to-Emitter Saturation Voltage | VCE(sat)1 VCE(sat)2 | IC=(--)3.5A, IB=(--)175mA IC=(--)2A, IB=(--)40mA | -- -- | (--230)160 (--240)110 | (--390)240 (--400)170 | mV mV |
| Base-to-Emitterr Saturation Voltage | VBE(sat) | IC=(--)2A, IB=(--)40mA | -- | (--)0.83 | (--)1.2 | V |
| Collector-to-Base Breakdown Voltage | V(BR)CBO | IC=(--)10µA, IE=0A | (--50)100 | -- | -- | V |
| Collector-to-Emitter Breakdown Voltage | V(BR)CES | IC=(--)100µA, RBE=0Ω | (--50)100 | -- | -- | V |
| Collector-to-Emitter Breakdown Voltage | V(BR)CEO | IC=(--)1mA, RBE=∞ | (--)50 | -- | -- | V |
| Emitter-to-Base Breakdown Voltage | V(BR)EBO | IE=(--)10µA, IC=0A | (--)6 | -- | -- | V |
| Turn-On Time | ton | See specified Test Circuit. | -- | (40)30 | -- | ns |
| Storage Time | tstg | See specified Test Circuit. | -- | (225)420 | -- | ns |
| Fall Time | tf | See specified Test Circuit. | -- | 25 | -- | ns |
Package Dimensions Package Dimensions
unit : mm unit : mm
7518-003 7003-003
Switching Time Test Circuit
PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching
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