STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

Certification:new & original
Model Number:STGB7NC60HDT4
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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STGP7NC60HD

STGF7NC60HD - STGB7NC60HD


N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK

Very Fast PowerMESH™ IGBT


■ LOWER ON-VOLTAGE DROP (Vcesat)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOSSES INCLUDE DIODE RECOVERY ENERGY

■ LOWER CRES/CIES RATIO

■ HIGH FREQUENCY OPERATION UP TO 70 KHz

■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION


DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.


APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS


Absolute Maximum ratings

SymbolParameterValueUnit

STGP7NC60HD

STGB7NC60HD

STGF7NC60HD
VCESCollector-Emitter Voltage (VGS = 0)600V
VECREmitter-Collector Voltage20V
VGEGate-Emitter Voltage±20V
ICCollector Current (continuous) at TC = 25°C (#)2510A
ICCollector Current (continuous) at TC = 100°C (#)146A
ICM (1)Collector Current (pulsed)50A
IFDiode RMS Forward Current at TC = 25°C20A
PTOTTotal Dissipation at TC = 25°C8025W
Derating Factor0.640.20W/°C
VISO

Insulation Withstand Voltage A.C.

(t = 1 sec; Tc = 25°C)

-2500V
TstgStorage Temperature– 55 to 150°C
TjOperating Junction Temperature

(1) Pulse width limited by max. junction temperature.


Figure 1: Package


Figure 2: Internal Schematic Diagram


China STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT supplier

STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

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