IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

Certification:new & original
Model Number:IRF1010EPBF
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Supplier`s last login times: within 48 hours
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Product Details

IRF1010EPbF

HEXFET® Power MOSFET


• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Lead-Free


Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.



Absolute Maximum Ratings

ParameterMax.Unit
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V84A
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V59A
IDMPulsed Drain Current330A
PD @TC = 25°CPower Dissipation200W
Linear Derating Factor1.4W/°C
VGSGate-to-Source Voltage± 20V
IARAvalanche Current50A
EARRepetitive Avalanche Energy17mJ
dv/dtPeak Diode Recovery dv/dt4.0V/ns
TJ TSTGOperating Junction and Storage Temperature Range-55 to + 175°C
Soldering Temperature, for 10 seconds300 (1.6mm from case )°C
Mounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)

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China IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET supplier

IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

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