IRLL110TRPBF Power Mosfet ic Transistor electrical ic switching power mosfet

Certification:new & original
Model Number:IRLL110TRPBF
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Supplier`s last login times: within 48 hours
Product Details Company Profile
Product Details

IRLL110, SiHLL110

Power MOSFET


PRODUCT SUMMARY

VDS (V)100
RDS(on) (Ω)VGS = 5.0 V0.54
Qg (Max.) (nC)6.1
Qgs (nC)2.6
Qgd (nC)3.3
ConfigurationSingle

FEATURES

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Logic-Level Gate Drive

• RDS(on) Specified at VGS = 4 V and 5 V

• Fast Switching

• Lead (Pb)-free Available


DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.


The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.


ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETERSYMBOLLIMITUNIT
Drain-Source VoltageVDS100V
Gate-Source VoltageVGS± 10V
Continuous Drain CurrentVGS at 5.0 VTC = 25 °CID1.5A
TC = 100 °C0.93
Pulsed Drain CurrentaIDM12A
Linear Derating Factor0.025W/°C
Linear Derating Factor (PCB Mount)e0.017W/°C
Single Pulse Avalanche EnergybEAS50mJ
Repetitive Avalanche CurrentaIAR1.5A
Repetitive Avalanche EnergyaEAR0.31mJ
Maximum Power DissipationTC = 25 °CPD3.1W
Maximum Power Dissipation (PCB Mount)eTA = 25 °C2.0
Peak Diode Recovery dV/dtcdV/dt5.5V/ns
Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 150°C
Soldering Recommendations (Peak Temperature)for 10 s300d°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 1.5 A (see fig. 12).

c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).


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China IRLL110TRPBF Power Mosfet ic Transistor electrical ic switching power mosfet supplier

IRLL110TRPBF Power Mosfet ic Transistor electrical ic switching power mosfet

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