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SiC Wafer 4H N-type Silicon Carbide grade 2inch 4inch 6inch 8inch DSP Customized
The Silicon Carbide Wafer comes in a 4H n-type, which is the most commonly used type for silicon carbide wafers. This type of wafer is preferred for its high carrier mobility, high thermal conductivity, and high chemical and mechanical stability.
The Silicon Carbide Wafer is available in three different grades: Production, Research, and Dummy. The Production grade wafer is designed for use in commercial applications and is produced to strict quality standards. The Research grade wafer is designed for use in research and development applications and is produced to even higher quality standards. The dummy-grade wafer is designed for use as a placeholder in the manufacturing process.
Silicon carbide (SiC) wafers are a key semiconductor material that
plays an important role in high-power, high-frequency electronic
devices, among other applications. Here are some of the
characteristics of SiC wafers:
1.Wideband gap characteristics:
SiC has a wide bandgap, typically between 2.3 and 3.3 electron
volts, which makes it excellent for high-temperature and high-power
applications. This wide-band gap property helps reduce the leakage
current in the material and improve the performance of the device.
2.Thermal conductivity:
SiC has very high thermal conductivity, several times higher than
conventional silicon wafers. This high thermal conductivity
facilitates efficient heat dissipation in high-power electronic
devices and improves device stability and reliability.
3.Mechanical properties:
SiC has excellent mechanical strength and hardness, which is
important for applications in high temperature and harsh
environments. SiC wafers perform well in high temperature, high
pressure, and high radiation environments, making them suitable for
applications requiring high strength and durability.
4.Chemical stability:
SiC has a high resistance to chemical corrosion and can resist the
attack of many chemicals, so it performs well in some special
environments where stable performance is required.
5.Electrical properties:
SiC has a high breakdown voltage and low leakage current, making it
very useful in high voltage, high frequency electronic devices. In
addition, SiC wafers have lower resistivity and higher
permittivity, which is essential for RF applications.
In general, SiC wafers have broad application prospects in
high-power electronic devices, RF devices, and optoelectronic
devices due to their excellent electrical, thermal, and mechanical
properties.
Item | 4H n-type SiC wafer P grade(2~8inch) | ||||
Diameter | 50.8±0.3mm | 76.2±0.3mm | 100.0±0.3mm | 150.0±0.5mm | 200.0±0.5mm |
Thickness | 350±25μm | 350±25μm | 350±25μm | 350±25μm | 500±25μm |
Surface Orientation | Off-Axis:4°toward <11-20>±0.5° | ||||
Primary Flat Orientation | Parallel to <11-20>±1° | <1-100>±1° | |||
Primary Flat Length | 16.0±1.5mm | 22.0±1.5mm | 32.5±2.0mm | 47.5±2.0mm | Notch |
Secondary Flat Orientation | Silicon face up: 90° CW. from Primary flat±5.0° | N/A | N/A | ||
Secondary Flat Length | 8.0±1.5mm | 11.0±1.5mm | 18.0±2.0mm | N/A | N/A |
Resistivity | 0.014~0.028Ω•cm | ||||
Front Surface Finish | Si-Face: CMP, Ra<0.5nm | ||||
Back Surface Finish | C-Face: Optical Polish, Ra<1.0nm | ||||
Laser Mark | Back side: C-Face | ||||
TTV | ≤10μm | ≤15μm | ≤15μm | ≤15μm | ≤20μm |
BOW | ≤25μm | ≤25μm | ≤30μm | ≤40μm | ≤60μm |
WARP | ≤30μm | ≤35μm | ≤40μm | ≤60μm | ≤80μm |
Edge Exclusion | ≤3 mm |
1. Power electronic devices:
SiC wafers have a wide range of applications in the field of power
electronic devices such as power MOSFETs (metal oxide semiconductor
field effect transistors) and SCHTKEY (Schottky barrier diodes).
The high breakdown field strength and high electron saturation
drift velocity of SiC material make it an ideal choice for high
power density and high efficiency power converters.
2. Radio frequency (RF) devices:
SiC wafers also find important applications in RF devices, such as
RF power amplifiers and microwave devices. The high electron
mobility and low loss of SiC materials make them excellent in high
frequency and high power applications.
3. Optoelectronic devices:
SiC wafers are also finding increasing applications in
optoelectronic devices, such as photodiodes, ultraviolet light
detectors, and laser diodes. The excellent optical properties and
stability of SiC material make it an important material in the
field of optoelectronic devices.
4. High temperature sensor:
SiC wafers are widely used in the field of high temperature sensors
due to their excellent mechanical properties and high temperature
stability. SiC sensors can operate stably in high temperature,
radiation, and corrosive environments and are suitable for the
aerospace, energy, and industrial sectors.
5. Radiation resistant electronic devices:
The radiation resistance of SiC wafers makes them widely used in
nuclear power, aerospace and other fields where radiation
resistance characteristics are required. SiC material has high
stability to radiation and is suitable for electronic devices in
high radiation environment.
We are committed to providing high quality and high performance customized SiC wafer solutions to meet the diverse needs of our customers. With advanced production equipment and technical team, our factory can customize SiC wafers of various specifications, thicknesses and shapes according to the specific requirements of our customers.
1. Q: What is the largest sapphire wafer?
A:300mm (12 inch) sapphire is now largest wafer for Light Emitting
Diodes (LEDs) and consumer electronics.
2. Q: What size are sapphire wafers?
A: Our standard wafer diameters range from 25.4 mm (1 inch) to 300 mm (11.8 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants.
3. Q:What is the difference between sapphire and silicon wafers?
A: LEDs are the most popular applications for sapphire. The
material is transparent and is an excellent conductor of light. In
comparison, silicon is opaque and does not allow for efficient
light extraction. The semiconductor material is ideal for LEDs,
however, because it is both cheap and transparent.