VGF 6 Inch N Type GaAs Semiconductor Substrate For Epitaxial Growth

Brand Name:ZMSH
Certification:ROHS
Model Number:S-C-N
Minimum Order Quantity:3PCS
Delivery Time:2-6weeks
Payment Terms:T/T, Western Union
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Location: Shanghai Shanghai China
Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Supplier`s last login times: within 38 hours
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Product Details

VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth


GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the semiconductor industry. Less power consumption and more efficiency offered by this GaAs wafers are attracting the market players to adopt these wafers, thereby increasing the demand for GaAs wafer. Generally, this wafer is used to manufacture semiconductors, light emitting diodes, thermometers, electronic circuits, and barometers, besides finding application in the manufacturing of low melting alloys. As the semiconductor and electronic circuit industries continue to touch new peaks, the GaAs market is booming. Gallium arsenide of GaAs wafer has the power of generating laser light from electricity. Especially polycrystalline and single crystal are the two major type of GaAs wafers, which are utilized in the production of both the microelectronics and optoelectronics to create LD, LED, and microwave circuits. Therefore, the extensive range of GaAs applications, particularly in optoelectronics and microelectronics industry is creating a demand influx in the GaAs Wafer Market. Previously, the optoelectronic devices were mainly used on a broad range in short-range optical communications and computer peripherals. But now, they are in demand for some emerging applications such as LiDAR, augmented reality, and face recognition. LEC and VGF are two popular methods which are improving the production of GaAs wafer with high uniformity of electrical properties and excellent surface quality. Electron mobility, single junction band-gap, higher efficiency, heat and moisture resistance, and superior flexibility are the five distinct advantages of GaAs, which are improving the acceptance of GaAs wafers in the semiconductor industry.


What we provide:

Item
Y/N
Item
Y/N
Item
Y/N
GaAs crystal
yes
Electronic Grade
yes
N type
yes
GaAs blank
yes
Infrared Grade
yes
P type
yes
GaAs substrate
yes
Cell Grade
yes
Undoped
yes
GaAs epi wafer
yes
Specification detail:
GaAs (Gallium Arsenide) for LED Applications
ItemSpecificationsRemarks
Conduction TypeSC/n-type 
Growth MethodVGF 
DopantSilicon 
Wafer Diamter2, 3 & 4 inchIngot or as-cut available
Crystal Orientation(100)2°/6°/15° off (110)Other misorientation available
OFEJ or US 
Carrier Concentration(0.4~2.5)E18/cm3 
Resistivity at RT(1.5~9)E-3 Ohm.cm 
Mobility1500~3000 cm2/V.sec 
Etch Pit Density<500/cm2 
Laser Markingupon request 
Surface FinishP/E or P/P 
Thickness220~350um 
Epitaxy ReadyYes 
PackageSingle wafer container or cassette 

GaAs (Gallium Arsenide) ,Semi-insulating for Microelectronics Applications


Item
Specifications
Remarks
Conduction Type
Insulating
 
Growth Method
VGF
 
Dopant
Undoped
 
Wafer Diamter
2, 3, 4 & 6 inch
Ingot available
Crystal Orientation
(100)+/- 0.5°
 
OF
EJ, US or notch
 
Carrier Concentration
n/a
 
Resistivity at RT
>1E7 Ohm.cm
 
Mobility
>5000 cm2/V.sec
 
Etch Pit Density
<8000 /cm2
 
Laser Marking
upon request
 
Surface Finish
P/P
 
Thickness
350~675um
 
Epitaxy Ready
Yes
 
Package
Single wafer container or cassette
 
No.ItemStandard Specification
1Size2"3"4"6"
2Diametermm50.8±0.276.2±0.2100±0.2150±0.5
3Growth MethodVGF
4DopedUn-doped, or Si-doped, or Zn-doped
5Conductor TypeN/A, or SC/N, or SC/P
6Thicknessμm(220-350)±20 or (350-675)±25
7Crystal Orientation<100>±0.5 or 2 off
OF/IF Orientation OptionEJ, US or Notch
Orientation Flat (OF)mm16±122±132±1-
Identification Flat (IF)mm8±111±118±1-
8Resistivity(Not for
Mechanical
Grade)
Ω.cm(1-30)´107, or (0.8-9)´10-3, or 1´10-2-10-3
Mobilitycm2/v.s 5,000, or 1,500-3,000
Carrier Concentrationcm-3(0.3-1.0)x1018, or (0.4-4.0)x1018,
or As SEMI
9TTVμm≤10
Bowμm≤10
Warpμm≤10
EPDcm-2 8,000 or ≤ 5,000
Front/Back SurfaceP/E, P/P
Edge ProfileAs SEMI
Particle Count<50 (size>0.3 μm,count/wafer),
or AS SEMI
10Laser MarkBack side or upon request
11PackagingSingle wafer container or cassette

Package Detail:


China VGF  6 Inch N Type GaAs Semiconductor Substrate For Epitaxial Growth supplier

VGF 6 Inch N Type GaAs Semiconductor Substrate For Epitaxial Growth

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