4Inch Customized A Axis Sapphire Wafers For Epitaxial Growth 430um SSP DSP
Brand Name:ZMSH
Model Number:2inch 4inch 6inch 8inch 12inch
Minimum Order Quantity:25pcs
Delivery Time:1-4weeks
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:china
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Shanghai Shanghai China
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Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
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2inch /3inch 4inch /5inch/6inch C-axis/a axis/ r axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness2inch 4inch customized A axis sapphire wafers for epitaxial growth 430um SSP DSP
About synthetic sapphire crystal
Due to the less mismatched lattice and stable chemical and physical properties, sapphire(Al2O3) wafer is the popular substrates for III-V nitrides, superconductor and magnetic epi-film. They are widely used in GaN and thin-film epitaxial growth, silicon on sapphire, LED market and optics industry.
ZMSH is a professional sapphire wafer supplier who manufactures 99.999% high purity single crystal polished sapphire wafers for epitaxy. And our sapphire (Al2O3) substrates feature excellent surface finish, which is the key LED parameter.
If you are looking for reliable sapphire wafer suppliers, Please feel free to contact us .
Sapphire Properties for A-PLANE (11-20) SAPPHIRE WAFERS
A plane(11-20) sapphire wafers have a uniform dielectric constant and highly insulating characteristic, so they are generally used for hybrid microelectronic applications. This orientation can also be used for the growth of high superconductors.
For example, TlBaCaCuO (TbBaCaCuO), Tl-2212, the hetero-epitaxial superconducting thin film is grown on a sapphire cerium oxide (CeO2) composite substrate. The availability of Angstrom level surface finishes allows for fine line interconnects of hybrid modules.
Specifications of A-Plane (11-20) Sapphire Wafers
| Item | 2-inch A-plane(11-20) 430μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | A-plane(11-20) | |
| Diameter | 50.8 mm +/- 0.1 mm | |
| Thickness | 430 μm +/- 25 μm | |
| Primary Flat Orientation | C-plane(0001) +/- 0.2° | |
| Primary Flat Length | 16.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
| TTV | < 10 μm | |
| BOW | < 10 μm | |
| WARP | < 10 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
Note: Custom sapphire wafers and substrates with any orientation and any thickness can be provided.
CATALOGU LIST IN STOCKS
| 2inch | DSP C-AXIS 0.1mm/ 0.175mm/0.2mm/0.3mm/0.4mm/0.5mm/1.0mmt SSP C-axis 0.2/0.43mm (DSP＆SSP) A-plane (1120) sapphire wafer R-plane (1102) sapphire wafer M-plane (1010) sapphire wafer |
| 3inch | DSP/ SSP C-axis 0.43mm/0.5mm |
| 4Inch | dsp c-axis 0.4mm/ 0.5mm/1.0mm ssp c-axis 0.5mm/0.65mm/1.0mmt |
| 6inch | ssp c-axis 1.0mm/1.3mmm dsp c-axis 0.65mm/ 0.8mm/1.0mmt |
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4Inch Customized A Axis Sapphire Wafers For Epitaxial Growth 430um SSP DSP
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