Customized Size Silicon Carbide Substrate Hardness 9.4 Sic Parts For Equipment
Brand Name:zmsh
Model Number:customized shaped
Minimum Order Quantity:10pcs
Delivery Time:within 15days
Place of Origin:china
Price:by case
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Location:
Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Supplier`s last login times:
within 13 hours
Product Details
Company Profile
Product Details
10x10mm 5x5mm customized square sic substrates ,1inch sic
wafers,sic crystal chips, sic semiconductor substrates, 6H-N SIC
wafer, High purity silicon carbide wafer
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we offers semiconductor materials, especially for SiC wafer, SiC
substate of polytype 4H and 6H in different quality grades for
researcher and industry manufacturers. We has a good relationship
with the SiC crystal growth factory and,we own also have the SiC
wafer processing technology, established a production line to
manufacturer SiC substrate and SiC wafer. As a professional company
invested by the leading manufacturers from the fields of advanced
and high-tech material research and state institutes and China's
Semiconductor Lab, we are devoted to continuously improve the
quality of SiC wafer, currently substates and develop large size
substrates.
Application areas
1 high frequency and high power electronic devices Schottky diodes,
JFET, BJT, PiN,
diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate
material (GaN/SiC) LED
Advantagement
• Low lattice mismatch• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Customized silicon carbide (SiC) substrates and parts, known for their remarkable hardness rating of 9.4 on the Mohs scale, are highly sought after for use in a variety of industrial and scientific applications. Their exceptional mechanical, thermal, and chemical properties make them ideal for environments where durability and performance under extreme conditions are critical.
Semiconductor Manufacturing: SiC substrates are widely used in the production of high-power, high-temperature semiconductors, such as MOSFETs, Schottky diodes, and power inverters. Customized sizes of SiC substrates are particularly useful for specific device requirements in industries like renewable energy (solar inverters), automotive (electric vehicles), and aerospace (avionics).
Equipment Parts: SiC’s hardness and wear resistance make it an excellent material for producing customized parts used in machinery and industrial equipment. These parts, such as seals, bearings, and cutting tools, must withstand high-stress environments, extreme heat, and corrosive substances, making SiC’s durability and resistance to thermal shock essential.
Optics and Photonics: SiC is also used in the production of optical components and mirrors for high-precision equipment, particularly in high-temperature environments. Its thermal stability ensures reliable performance in scientific instruments, lasers, and other sensitive applications.
In summary, customized SiC substrates and parts offer unmatched hardness, thermal resistance, and chemical inertness, making them invaluable across various high-tech industries.
commen 2inch size for sic substrates
| 2inch diameter Silicon Carbide (SiC) Substrate Specification | ||||||||||
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | ||||||
| Diameter | 50.8 mm±0.2mm | |||||||||
| Thickness | 330 μm±25μm or 430±25um Or 1000um±25um | |||||||||
| Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI | |||||||||
| Micropipe Density | ≤0 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤100 cm-2 | ||||||
| Resistivity | 4H-N | 0.015~0.028 Ω•cm | ||||||||
| 6H-N | 0.02~0.1 Ω•cm | |||||||||
| 4/6H-SI | ≥1E5 Ω·cm | |||||||||
| Primary Flat | {10-10}±5.0° | |||||||||
| Primary Flat Length | 18.5 mm±2.0 mm | |||||||||
| Secondary Flat Length | 10.0mm±2.0 mm | |||||||||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||||||||
| Edge exclusion | 1 mm | |||||||||
| TTV/Bow /Warp | ≤10μm /≤10μm /≤15μm | |||||||||
| Roughness | Polish Ra≤1 nm | |||||||||
| CMP Ra≤0.5 nm | ||||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |||||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | |||||||
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | |||||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |||||||
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |||||||
picture size: 10x10x0.5mmt,
tolerance:±0.03mm
match depth x width: 0.4mmx0.5mm
TYPE:4H-semi
surface: polished (ssp or dsp)
Ra:0.5nm
FAQ
1. Q:What is your package ? Are they safe ?
A: we provide Automatic adsorption film box as package.
2.Q: What is your payment term ?
A:Our payment term is T/T 50% in advance ,50% before delivery .
3.Q:How can I get some samples?
A:Becauce customized shape products, we hope you can order min lot
as sample.
4.Q: How long time we can get the samples ?
A: We send the samples in 10- 25 days after you confirm .
5.Q:How does your factory do regarding quality control ?
A:Quality first is our motto ,Workers always attach great
importance to quality controlling from
the very beginning to the very end .
Customized Size Silicon Carbide Substrate Hardness 9.4 Sic Parts For Equipment
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