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6 Inch 1.0mm Ceramic Substrate , Alumina Ceramic Plate For Semiconductor Processing

6 Inch 1.0mm Ceramic Substrate , Alumina Ceramic Plate For Semiconductor Processing

Brand Name:zmkj
Model Number:AlN
Minimum Order Quantity:20pcs
Delivery Time:10-20days
Place of Origin:CHINA
Price:by case
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Location: Shanghai Shanghai China
Address: Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Supplier`s last login times: within 13 hours
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Product Details

6inch 1.0mmAluminum Nitride AlN Ceramic Substrate, High Thermal Conductivity, Customized AlN Ceramic,6inch ceramic substrates


AlN Introduce

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic),

low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and

other fields.Special spec products can be produced upon requests.


PRODUCT PERFORMANCE
High thermal conductivity, high flexural strength, high temperature,Good electrical insulation
Low dielectric constant and loss

APPLICATIONS

  • RF/Microwave Components

  • Power Modulus

  • Power Transformers

  • High Power LED package

  • Laser Diode Sub-mounts

  • LED Chip Sub-mount

  • Microelectronic Packages

  • Transistors

​Our cooperating factory can applied the casting-tape process for the manufacturing of alumina substrate. With good thermal conductivity, insulation, thermal shock resistance, well resistance and anti-acid and

alkali etc., our ceramic substrates can be used in thick-film hybrid integrated circuits (HIC), LED ceramic radiating base, power module, semiconductor devices and other fields.


AlN Feature & Advantagement

- Product Name:

Aluminium Nitride / AIN Ceramic Substrate

- Material:Aluminum Nitride / AlN
- Typical Characteristics:

1. Very High Thermal Conductivity

2. Good Electrical Insulation

3. Corrosion Resistance

4. Good Flatness

- Typical Applications:

1. Power Electronic Device

2. High Brightness LED

3. Communication Device

Material Properties
Properties / Material96% AluminaAlN
Density (g/cm3)3.63.3
ColorWhiteGrey
Dielectric Strength (KV/mm)≥17≥17
Dielectric Constant (1MHz)10.68.9
Volume Resistivity (@20°C, Ω.cm)≥1014≥1014
Thermal Conductivity (@20°C, W/mk)≥24≥175
Thermal Expansion Coefficient (10-6/°C)6.5-8.04.8
Flexural Strength (MPa)≥350≥450

Regular Size
Thickness(mm)lengthx width ( mm)
0.385

2″* 2″

50.8mm*50.8mm



3″* 3″

76.2mm*76.2mm


4″* 4″

101.6mm*101.6mm

4.5″* 4.5″

114.3mm*114.3mm

0.5
0.635
1.0
diameter(mm)
1.0

Φ16

Φ19

Φ20

Φ26

Φ30

Φ35

Φ40

Φ45

Φ50

Φ52

Φ60Φ75Φ80
1.2
1.5
2.0
2.5
Diameter (mm)Thickness (mm)

2''

(50.8mm )

OF 16mm

3''

(76.2mm)

OF22mm

4''

(100mm)

OF 30mm

5“

(125mm)

OF 42.5mm

6"

(150mm)

OF 47.5mm

0.385
0.5
0.65
1.0

Polishing Service

Our AlN substrate can be polished(single and double polish) by the advanced machine which imported

from abroad. Ceramic substrate surface roughness can reach to 1nm without porous after being polished.

It is perfectly suitable for the device application of small spec, high precision , wiring density and good stability.

Package & Delivery

China 6 Inch 1.0mm Ceramic Substrate , Alumina Ceramic Plate For Semiconductor Processing supplier

6 Inch 1.0mm Ceramic Substrate , Alumina Ceramic Plate For Semiconductor Processing

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