2SA1736 High Power Mosfet Transistors Power Amplifier , Switching Applications

2SA1736

Power Amplifier Applications

Power Switching Applications

• Low saturation voltage: V_{CE (sat)} = −0.5 V (max) (I_C = −1.5 A)

• High speed switching time: t_stg = 0.2 μs (typ.)

• Small flat package

• P_C = 1.0 to 2.0 W (mounted on a ceramic substrate)

• Complementary to 2SC4541

Absolute Maximum Ratings (Ta = 25°C)

Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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