TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

Brand Name:TOSHIBA
Certification:Original Factory Pack
Model Number:30J127
Minimum Order Quantity:20pcs
Delivery Time:1 Day
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J121


High Power Switching Applications

Fast Switching Applications


• The 4th generation

• Enhancement-mode

• Fast switching (FS):

Operating frequency up to 50 kHz (reference)

High speed: tf = 0.05 µs (typ.)

Low switching loss : Eon = 1.00 mJ (typ.)

: Eoff = 0.80 mJ (typ.)


• Low saturation voltage: VCE (sat) = 2.0 V (typ.)


Maximum Ratings (Ta = 25°C)

CharacteristicsSymbolRatingUnit
Collector-emitter voltageVCES600V
Gate-emitter voltageVGES±20V
Collector power dissipation (Tc = 25°C)PC170W
Junction temperatureTj150°C
Storage temperature rangeTstg−55 to 150°C

Switching time measurement circuit and input/output waveforms

China TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  Silicon N Channel IGBT High Power Switching  30J127 supplier

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

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