DMN26D0UT-7 DMN26 Diodes N-Channel Mosfet Surface Mount SOT-523
... Products Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series MOSFET Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id)...
Angel Technology Electronics Co
Verified Supplier
FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000
IRFP2907PBF High-Performance N-Channel MOSFET for Power Electronics Applications
...Channel MOSFET for Power Electronics Applications IRFP2907PBF MOSFET This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a low gate-source threshold voltage. It also has good thermal stability, excellent frequency performance, and a robust package. This MOSFET......
Shenzhen Sai Collie Technology Co., Ltd.
Verified Supplier
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
7A 650V Large EMI Margin N Channel MOSFET LC65R600F
...ID TYP MAX Typ Typ LC65R600F TO-220F 1 N 7 650 30 2 4 550 640 Product Description: One of the key features of this MOSFET is its 100% avalanche tested design, which ensures that it can handle high voltage spikes and other harsh conditions without failure....
...Mosfet Array, 2 N-Channel (Half Bridge) Module. Specification Of FF2MR12KM1HOSA1 Part Number FF2MR12KM1HOSA1 Series CoolSiC™ Configuration 2 N-Channel (Half Bridge) Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current -...
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low ......
Shenzhen Retechip Electronics Co., Ltd
Verified Supplier
Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits
... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and...
Shenzhen Winsun Technology Co., Ltd.
311EF, B Buliding, Zhengzhong Time Square, Longgang District, Shenzhen City, China.
Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF
...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Shenzhen ATFU Electronics Technology ltd
Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031
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