1 - 10 Results for switching transistors 13005 from 2211 Products
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor Mos Field Effect Transistor Description Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor Mos Field Effect Transistor Description Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A
OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS=...
OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A
OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS=...
Durable High Speed Power Switching Transistor , Power Darlington Transistor
Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss (pF) Coss...
Durable High Speed Power Switching Transistor , Power Darlington Transistor
Durable High Speed Power Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss (pF) Coss...
Stw25n80k5 Power Switching Transistor 19.5a 800v 250w 40nC N Channel Ultra Low Gate
N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency...
Shenzhen Retechip Electronics Co., Ltd
Verified Supplier
Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
BSZ0909NS MOSFET Power Electronics High Performance High-Efficiency Switching Transistors
BSZ0909NS MOSFET Power Electronics High Performance High-Efficiency Switching Transistors Features: - N-Channel MOSFET - Voltage: 100V - Drain Current: 6A - Rds(on): 0.36ohm - Package: TO-252 - Maximum Power Dissipation: 2.1W - Operating Temperature: -55°C to 175°C Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada ....
Shenzhen Sai Collie Technology Co., Ltd.
Verified Supplier
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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