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Infineon Coolmos IPB60R099P7 NPN PNP Transistors 600V 31A 77 MOhms

China Infineon  Coolmos IPB60R099P7 NPN PNP Transistors 600V 31A 77 MOhms on sale
Infineon 600V Coolmos IPB60R099P7 600V 31A 77 MOhms Npn Power Transistor Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the...
Shenzhen Retechip Electronics Co., Ltd
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Vishay IRF740PBF NPN PNP Transistors 400V 10A Power MOSFET 125W 550 MOhms

China Vishay IRF740PBF NPN PNP Transistors 400V 10A Power MOSFET 125W 550 MOhms on sale
Vishay IRF740PBF Npn And Pnp Transistor 400V 10A Power MOSFET 125W 550 MOhms Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

FDA59N30 NPN PNP Transistors 59A 300V N Channel 56 MOhms High Power Transistor

China FDA59N30 NPN PNP Transistors 59A 300V N Channel 56 MOhms High Power Transistor on sale
FDA59N30 Pnp Power Transistor 59A 300V N-Channel 56 MOhms High Power Transistor Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

IRFS4227TRLPBF NPN PNP Transistors 200V 62A 70nC Qg N Channel Mosfet

China IRFS4227TRLPBF  NPN PNP Transistors  200V 62A 70nC Qg N Channel Mosfet on sale
Infineon Silicon Npn Power Transistors IRFS4227TRLPBF 200V 62A 26mOhm 70nC Qg N Channel Mosfet Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS

China TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS on sale
TOSHIBA TK39A60W Power Switching Transistor 38.8A 600V 50W 4100pF Silicon N-Channel MOS Applications Switching Voltage Regulators Description Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

RURG8060 Switching Diode 80A 600V General Purpose Power Switching npn and pnp transistor

China RURG8060 Switching Diode 80A 600V General Purpose Power Switching npn and pnp transistor on sale
Product Description: The RURG8060 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial application. Features: • Ultrafast Recovery, trr = 85 ns (@ IF = 80 A ) • Max Forward Voltage, VF = 1.6 V (@ TC = 25 °C ) • 600 V Reverse...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Fuji N-Channel NPN PNP Transistors FMH23N50E Silicon Power Mosfet 23a 500v

China Fuji N-Channel NPN PNP Transistors FMH23N50E Silicon Power Mosfet 23a 500v on sale
Fuji N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

TK5A90E,S4X NPN PNP Transistors 4.5A 900V 3.1Ohms N Channel Mosfet

China TK5A90E,S4X NPN PNP Transistors 4.5A 900V 3.1Ohms N Channel Mosfet on sale
TK5A90E,S4X switching voltage regulators 4.5A 900V 3.1Ohms N-Channel Mosfet Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs are offered with a drain-source voltage range of 250V up to 650V, and with a drain current range from 2A to 20A....
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

China SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components on sale
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401 TO-92 Bulk 1000pcs/Bag 2N5401-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter...
Beijing Silk Road Enterprise Management Services Co.,LTD
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SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

China SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components on sale
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401 TO-92 Bulk 1000pcs/Bag 2N5401-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter...
Beijing Silk Road Enterprise Management Services Co.,LTD
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