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1 - 20 Results for transistor operation from 3886 Products

... Description 10 AMPERE COMPLEMENTARY SILICON POWER 60 VOLTS − 75 WATTS There are two limitations on the power handling abili...

Time : Dec,09,2024
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... (BJT) designed as a complementary component to the S8550. It is suitable for general-purpose amplification and switching applications. K...

Time : Feb,14,2026
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...: 125 V Rds On - Drain-Source Resistance: - Frequency: 150 MHz Gain: 17 dB Output Power: 150 W Minimum Temperature: - 65 C Maxi...

Time : Mar,03,2026
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... These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output . With superior gain ...

Time : Dec,09,2024
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... Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar The...

Time : Mar,30,2026
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... IRF540NPBF Description: Superior Design for Advanced Electronics If you're looking for an advanced power for your electro...

Time : Mar,24,2026
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... TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Appl...

Time : Dec,09,2024
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... / Field Effect AP5N10LI Complementary Power Description The AP5N10LI uses advanced trench technology to provide ...

Time : Dec,09,2024
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... 60a 600v To247 Igbt s Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd gene...

Time : Dec,09,2024
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... according to customers' need, such as cutting only , bending 90 degrees, windening leads, kinking the leads. It is easy to , just need to i...

Time : Dec,09,2024
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... 15A 250V 150W NJW0281G 250V 15A 150W hfe75-150 and NJW0302G 250V 15A 150W hfe75-150 are pair. 15 AMPERES COMPLEMENTARY SILICON POWER TR...

Time : Dec,09,2024
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... Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for toda...

Time : Dec,09,2024
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...- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Temperature: + 150 C Conti...

Time : Dec,09,2024
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... Pd - Power Dissipation: 225 mW Zener Current: 15 uA Zz - Zener Impedance: 24 Ohms Minimum Temperature: - 65 C Maximum Temperat...

Time : Dec,09,2024
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... the frequency range of 1800 to 2200 MHz. This part is characterized and performance is guaranteed for applications in the 1800 to 2200 M...

Time : Dec,09,2024
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... length, bending 90 degrees. Special working mode and feeding mode, it can reach up to 3300-3600pcs/hour. It can greatly increase 's...

Time : Dec,09,2024
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IRF3205PbF HEXFET® Power MOSFET 55V 98A TO-220 MOSFET Transistors Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize adva...

Time : Dec,09,2024
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Original ULN2803ADWR SOIC-18 brand new in stock electronic components Technological Parameters: Package Type SOIC-18 Power - Max 2.25 W Ope...

Time : Mar,24,2026
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MSC035SMA070S Integrated Circuit Chip TO-268-3 N-Channel ​​ Product Description Of MSC035SMA070S MSC035SMA070S is is a 700 V, 3...

Time : Mar,27,2026
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... LM317MDTRKG ON TO-252 Positive Voltage Regulator Features • Output Current in Excess of 500 mA • Output Adjustable between 1.2 V and 37...

Time : Dec,09,2024
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