mosfet used as a switch

...Ω. 3. It provides low input and gate capacitance, making it suitable for high-frequency applications. 4. It offers low gate charge and fa...

... Power Transistor for high speed application Description The 2SC5589 is a high voltage, high efficiency, simple to , 4A buck reg...

General Description: The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with hi...

... Power Transistor For Load Power Management Power Transistor DESCRIPTION The 50P03NF advanced trench technology to provide...

... density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and...

...Load • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate...

... 7A 650V Applications In Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER DESCRIPTION The F7N65 is a high vol...

... as fast time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power is usually in h...

... transistor. With a superior voltage tolerance of up to 600 volts and a maximum current capacity of 80 amps, this N-channel power is ...

... 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mount...

... General Description This 20V N-Channel uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management ...

...% avalanche tested. Zener-protected. Absolute Maximum Ratings : applications. Tailored for very high frequency converters (f > 150 kHz). ...

... transistor. The following are its applications, conclusions, and parameters: Application: as a high-voltage and high-power load ...

... 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power s from International Rectifier utilize advanced processing tech...

... epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for , compared to its predecessor, DTMOSIII. This red...

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabl...

...designed for gate control of N-channel, enhancement-mode, power as high-side or low-side . The MIC5016/7 can sustain an on-sta...

SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICA...

... 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS...

... SMD N-Channel with Load Description The AP85N03NF advanced trench technology to provide excellent R DS(ON) low gate charge and o...