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1 - 20 Results for mosfet 50w x 4 from 226 Products

AOD508 MOSFET Power Electronics Discrete Semiconductor N-Channel 30V 50W Surface Mount Package TO-252 FET Type N-Channel Technology MOSFET (Metal Oxid...

Time : Dec,09,2024
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Product Description Product Detail Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Vo...

Time : Dec,09,2024
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... epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for , compared to its predecessor, DTMOSIII. This red...

Time : Dec,09,2024
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TDA2050 32W Hi-Fi AUDIO POWER AMPLIFIER • HIGH OUTPUT POWER (50W MUSIC POWER IEC 268.3 RULES) • HIGH OPERATING SUPPLY VOLTAGE (50V) • SINGLE OR SPLIT ...

Time : Dec,09,2024
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MOSFET N-CH 1500V 2A IC Chip TO-3P 2SK2225-80-E-T2 2SK2225 Products Description: 1. Silicon N Channel MOS FET Silicon N Channel MOS FET, through hole ...

Time : Dec,09,2024
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... (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 65A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs...

Time : Dec,09,2024
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Brand: YASKAWA Country Of Origin: Japan Condition: New Original Warranty: 1 Years Delivery Time: 3-5 Working Days High Light: 3000RPM Industrial Servo...

Time : Dec,09,2024
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TDA2050 32W Hi-Fi AUDIO POWER AMPLIFIER • HIGH OUTPUT POWER (50W MUSIC POWER IEC 268.3 RULES) • HIGH OPERATING SUPPLY VOLTAGE (50V) • SINGLE OR SPLIT ...

Time : Dec,09,2024
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RF 28 V 1.4 A 2.17GHz 16dB NI-880H-2L...

Time : Sep,04,2025
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RF 32 V 1.6 A 2.11GHz ~ 2.17GHz 17.5dB SOT502B...

Time : Dec,09,2024
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RF 30 V 1.6 A 2.14GHz 15.8dB H-37260-2...

Time : Dec,19,2024
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RF 50 V 300 mA 0Hz ~ 4GHz 12.5dB 440193...

Time : Dec,09,2024
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... Surface Mount TO-252 General Description The AOD417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate r...

Time : Dec,09,2024
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... voltage MDMesh Power in the same package. Typical applications cover offline power supplies with a secondary power capability ranging up to...

Time : Dec,09,2024
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... switching speed, and low leakage current, which can achieve high efficiency and reliability of power switching. Parameters: Maximum dissipation po...

Time : Sep,16,2025
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