... Fault Protection: Over Current, Over Temperature, UVLO Description LMG3411R070RWHR provides a smart alternative to traditional cascode GaN and sta...
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... AUIRS4428STR Products Description: 1. Gate drive supply range from 6 V to 20 V 2. CMOS Schmitt-triggered inputs 3. Matched propagation d...
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STOCK LIST PA0173NLT 7386 PULSE 16+ SOP P0926NL 8560 PULSE 16+ SOP PM10CSJ060 145 MITSUBISH 10+ MOUDLE PH150S280-24 914 LAMBDA 16+ IGBT LM75CIMX-5 432...
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... Quick Detail: High Efficiency Low-Side N-Channel Controller for Switching Regulator Description: The LM3478 is a versatile Low-Side N- switchin...
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... is a four channel high-side pre- which provides serial or parallel input interface to control four external NMOS power . It is desig...
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...® Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Not For New Designs Type N-Channel Technology MOS (Metal Oxide) Drain to ...
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... TSMC 12V DRVR Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: Gate RoHS: Details Prod...
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145 MHz Fast Op Amps optical integrated circuits AD8065WARTZ High Performance APPLICATIONS ►Automotive assistance systems ►Photodiode pream...
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MADR-009443-0001TR General Purpose QUAD FET AND PIN DRIVER PQFN PRODUCT DESCRIPTION Part number MADR-009443-0001TR is manufactured by MACOM Technology...
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..., and GaN (UCC5350SBD). The UCC53x0S provides a split output that controls the rise and fall times individually. The UCC53x0M connects the gat...
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TL074CDT J-FET Amplifier IC 4 Circuit 14-SO Description: The TL074, TL074A, and TL074B are high-speed JFET input single operational amplifiers. Each o...
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IRFR9024NPBF P-Channel MOSFET 55V 11A 38W Surface Mount D-Pak FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Cu...
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... Detailed Product Description Package: SOP-8 Price: Please Contact Us Shipping Way: Post Office And So On Shipping Ways: DHL/FEDEX/EMS/CHINA ...
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... structure that allows great heat dissipation, making it suitable for high voltage/ultra-high voltage applications. It is perfect for LED , a...
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... . Step size is 0.5 dB pro-viding a 31.5 dB total attenuation range. This device is in an FQFP-N plastic surface mount ......
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..., as we can see in the following figure. Thus the device is also called as the V-MOS or V-. The V- the shape of power MOS is cut to penetr...
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..., as we can see in the following figure. Thus the device is also called as the V-MOS or V-. The V- the shape of power MOS is cut to penetr...
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Power Management ICs Texas Instruments/TI TPS259530DSGT FET Internal Ron (Typ) (mOhm) 34 Vin (Min) (V) 2.7, 3 Vin (Max) (V) 18 Vabsmax_cont (V) 20 Cur...
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HIP4081AIBZ IC HALF/FULL BRIDGE DRVR 20SOIC Renesas Electronics America Inc Product Details Description: The Renesas HIP4081AIBZ gate drivers are high...
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