No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

Brand Name:Silian
Certification:SGS/ ISO
Model Number:Customized
Minimum Order Quantity:500pcs
Delivery Time:5-8 weeks
Payment Terms:Western Union, T/T, MoneyGram
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Location: Chongqing Chongqing China
Address: No.99 Tong Xi Road, Caijia Town, Beibei District, Chongqing,China
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Product Details

6-inch sapphire substrate with good light transmittance


Product Description


The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) epitaxial growth. It has ultra-high hardness, stable physical and chemical properties at high temperatures, excellent optical performance.


Technical Specification


PropertiesUnit6 inch substrate
Diametermm150.1±0.1
Flat Lengthmm47.5±1
MaterialHigh Purity and Monocrystalline AL2O3
Surface Crystal OrientationC-Plane 0°±0.1°
Primary Flat OrientationA-plane 0°±0.5°
Broke Edge≤3mm
CrackNo Cracking
DefectNo Wrappage,Twin Crystal or Crystal Boundary
EPD<1000/cm²

Performance research


The semi-polar and non-polar GaN can be grown on the sapphire substrate with some special planes like M-plane <1-100>and R-plane <1-102>. The semi-polar and non-polar GaN have good performance to improve the device droop effect, wavelength shift phenomenon and long wavelength band efficiency of LED device. Studies have shown that using the high-temperature AlN nucleation layer and the higher AlGaN growth temperature, or a buffer layer with the multilayer AlGaN, or using Si doping technique can effectively improve the crystal quality and the dislocation density of semi-polar and non-polar AlGaN thin films grown on sapphire substrates.



China No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance supplier

No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

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