100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

4 Inch Sapphire Substrate Is Widely Used

Product Description

The epitaxial layers of GaN-based materials and devices are mainly grown on sapphire substrates. Sapphire substrate has many advantages: firstly, the production technology of sapphire substrate is mature and the device quality is good; secondly, sapphire is very stable and can be used in the high-temperature growth process; finally, sapphire has high mechanical strength and is easy to handle And cleaning. Therefore, most processes generally use sapphire as the substrate.

Technical Specification

Working principle

The working principle of the LED is that in the case of forward conduction, the electrons and holes injected into the P/N section of the diode meet and recombine, and the potential energy is converted into light energy. The wavelength of the emitted photons (that is, the color of light) is determined by the energy band width of the semiconductor. The current blue and green LED devices are based on group III nitride semiconductors, which is mainly GaN, and InNAlN is the supplementary four. Yuan AlGaInN alloy system.

To epitaxially grow a GaN film on a sapphire substrate, firstly a two-step epitaxial GaN buffer layer on the substrate (low-temperature epitaxial GaN nucleation layer, then high-temperature epitaxial u-GaN buffer layer); the second step is to grow Si-doped n-GaN The third step is to grow a multifunctional quantum well to provide a radiation recombination center, allowing electrons and holes to recombine and emit light; the fourth step to grow a Mg-doped p-GaN layer to provide hole injection. Normally, the LED structure is as shown in the picture.

Chongqing Silian Optoelectronics Science & Technology Co., Ltd was founded by China Silian Instrument Group Co., Ltd for the development of LED industry. After the acquisition of Honeywell Sapphire business, the company has become China’s first enterprise with the world’s top-quality large-sized sapphire production and R&D capabilities. The company has the world’s leading high-power sapphire substrates technology. Taking the excellent oppotunity, the company has developed LED packaging, LED lighting applications and other industries in succession to project extension in LED industrial chain. Based on the core-technology of sapphire substrates, we have created an area of 1000 mu (approximately 66.7 hectares) to develop LED industrial china from basic materials to high end products and become the most completed and largest semiconductor energy-efficient in dustrial base in Western China.

Maintaining the enterprise spirit of “People oriented, Natural Selection, Inheriting innovation and Pursuit of Excellence” and the customer tenet of “Silian is guided through customers and stands with customers”, we are committed to provide customers with high-quality sapphire chip substrates, optical window materials, LED packaging devices, and high efficiency LED lighting desplay high end products and creating value for customers.

Silian the international large-sized sapphire substrates standards lauching member.

Acquiring the completed production line from sapphire crystal growth to substrate processing.

We have the qulity advantages of high purity, high consistency and high repeatability.

Cooperating with world top level LED chip manufactures.