4 Inch LNOI Wafer Achieving Compact Photonic Integration

Brand Name:BonTek
Certification:ISO:9001, ISO:14001
Model Number:LNOI Wafer
Minimum Order Quantity:25 pcs
Delivery Time:1-4 weeks
Payment Terms:T/T
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Location: Hangzhou Shanghai China
Address: Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China
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Achieving Compact Photonic Integration With 4-Inch LNOI Wafers


LNOI stands for Lithium Niobate on Insulator, which is a specialized substrate technology used in the field of integrated photonics. LNOI substrates are fabricated by transferring a thin layer of lithium niobate (LiNbO3) crystal onto an insulating substrate, typically silicon dioxide (SiO2) or silicon nitride (Si3N4). This technology offers unique advantages for the development of compact and high-performance photonic devices.


The fabrication of LNOI substrates involves bonding a thin layer of LiNbO3 onto an insulating layer using techniques like wafer bonding or ion-cutting. This results in a structure where LiNbO3 is suspended on a non-conductive substrate, providing electrical isolation and reducing the optical waveguide losses.


Applications of LNOI:

  • Integrated Photonics
  • Optical Communication
  • Sensing and Metrology
  • Quantum Optics

LNOI Wafer
StructureLN / SiO2 / SiLTV / PLTV< 1.5 μm ( 5 5 mm2 ) / 95%
DiameterΦ100 ± 0.2 mmEdge Exclution5 mm
Thickness500 ± 20 μmBowWithin 50 μm
Primary Flat Length47.5 ± 2 mm
57.5 ± 2 mm
Edge Trimming2 ± 0.5 mm
Wafer BevelingR TypeEnvironmentalRohs 2.0
Top LN Layer
Average Thickness400/600±10 nmUniformity< 40nm @17 Points
Refraction indexno > 2.2800, ne < 2.2100 @ 633 nmOrientationX axis ± 0.3°
GradeOpticalSurface Ra< 0.5 nm
Defects>1mm None;
1 mm Within 300 total
DelaminationNone
Scratch>1cm None;
1cm Within 3
Primary FlatPerpendicular to +Y Axis ± 1°
Isolation SiO2 Layer
Average Thickness2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nmUniformity< ±1% @17 Points
Fab. MethodThermal OxideRefraction index1.45-1.47 @ 633 nm
Substrate
MaterialSiOrientation<100> ± 1°
Primary Flat Orientation<110> ± 1°Resistivity> 10 kΩ·cm
Backside ContaminationNo visible stainBacksideEtch





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4 Inch LNOI Wafer Achieving Compact Photonic Integration

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