C Plane Polished Sapphire Single Crystal Wafer 2 Inch 0001 430um

Brand Name:BonTek
Certification:ISO:9001
Model Number:Sapphire (Al2O3)
Minimum Order Quantity:5 Pieces
Delivery Time:1-4 weeks
Payment Terms:T/T
Contact Now

Add to Cart

Verified Supplier
Location: Hangzhou Shanghai China
Address: Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China
Supplier`s last login times: within 30 hours
Product Details Company Profile
Product Details

2 Inch C Plane 0001 430um Sapphire Single Crystal Wafers Polished Wafer


Sapphire is a single crystal of alumina and is the second-hardest material in nature, after diamond. Sapphire has good light transmittance, high strength, collision resistance, wear resistance, corrosion resistance and high temperature and high pressure resistance, biocompatibility, is an ideal substrate material for the production of semiconductor optoelectronic devices, the electrical properties of sapphire make it become the substrate material for the production of white and blue LED.


Our company's long-term production thickness ≧0.1mm, shape size ≧Φ2" high precision sapphire wafer. In addition to the conventional Φ2 ", Φ4 ", Φ6 ", Φ8 ", other sizes can be customized, please contact our sales staff.



Item2-inch C-plane(0001) 430μm Sapphire Wafers
Crystal Materials99,999%, High Purity, Monocrystalline Al2O3
GradePrime, Epi-Ready
Surface OrientationC-plane(0001)
C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter50.8 mm +/- 0.1 mm
Thickness430 μm +/- 25 μm
Primary Flat OrientationA-plane(11-20) +/- 0.2°
Primary Flat Length16.0 mm +/- 1.0 mm
Single Side PolishedFront SurfaceEpi-polished, Ra < 0.2 nm (by AFM)
(SSP)Back SurfaceFine ground, Ra = 0.8 μm to 1.2 μm
Double Side PolishedFront SurfaceEpi-polished, Ra < 0.2 nm (by AFM)
(DSP)Back SurfaceEpi-polished, Ra < 0.2 nm (by AFM)
TTV< 10 μm
BOW< 10 μm
WARP< 10 μm
Cleaning / PackagingClass 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.

OPTICAL PROPERTIES of SAPPHIRE Al2O3

Transmission Range

0.17 to 5.5 microns

Refractive Index

1.75449 (o) 1.74663 (e) at 1.06 microns

Reflection Loss

at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

Index of Absorption

0.3 x 10-3 cm-1 at 2.4 microns

dN/dT

13.7 x 10-6 at 5.4 microns

dn/dm = 0

1.5 microns


PHYSICAL PROPERTIES of SAPPHIRE Al2O3

Density

3.97 g/cm3

Melting Point

2040 degrees C

Thermal Conductivity

27.21 W/(m x K) at 300 K

Thermal Expansion

5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K

Hardness

Knoop 2000 kg/mm 2 with 2000g indenter

Specific Heat Capacity

419 J/(kg x K)

Dielectric Constant

11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz

Young's Modulus (E)

335 GPa

Shear Modulus (G)

148.1 GPa

Bulk Modulus (K)

240 GPa

Elastic Coefficients

C11=496 C12=164 C13=115
C33=498 C44=148

Apparent Elastic Limit

275 MPa (40,000 psi)

Poisson Ratio

0.25


Orientation

R-plane, C-plane, A-plane, M-plane or a specified orientation

Orientation Tolerance

± 0.3°

Diameter

2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others

Diameter Tolerance

0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches

Thickness

0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others;

Thickness Tolerance

25μm

Primary Flat Length

16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches

Primary Flat Orientation

A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2°

TTV

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

BOW

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

Front Surface

Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations)

Back Surface

Fine ground (Ra=0.6μm~1.4μm) or Epi-polished

Packaging

Packaged in a class 100 clean room environment


China C Plane Polished Sapphire Single Crystal Wafer 2 Inch 0001 430um supplier

C Plane Polished Sapphire Single Crystal Wafer 2 Inch 0001 430um

Inquiry Cart 0