Phi 2'' To 8'' Thermal Oxide Silicon Wafer N-Type P-Type With An Insulating Oxide Layer

Phi 2'' to 8'' Thermal Oxide Silicon Wafer N-Type P-Type With an Insulating Oxide Layer

BonTek provides high quality silicon thermal oxide wafers in all diameters from 2″ to 300mm. We ensure your specific requirements are met by choosing prime grade and defecting free silicon wafer as a substrate so that a high uniform layer of thermal oxide is formed in a furnace.

In micro-technology, the main insulating material used is Silicon dioxide which in chemical symbols is written as SiO2. In order to produce an insulating oxide layer, thermal oxidation, which is the most common technique used to obtain the layer is used. The process of obtaining the layer is performed in a furnace.

Thermal Oxide On Both Sides Of Wafer

Acceptance Check

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

3. Please open the vacuum package in a clean room when the products are to be applied.

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.

Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturing sites in Shanghai, Jiaxing and Deqin etc.

Our products are mainly used in RF Telecom, Semiconductor, Biotech, Optical engineering and frequency control industries. The monthly production capacity: 500K single quartz blanks (SC, AT, IT, FC, etc.), 20K quartz wafers (AT, ST, X, Z, etc.), 10K LiNbO3 wafers (3~8 inch), 10K glass wafers (Fused silica, Borofloat33, Corning, etc.), 8K LiTaO3 wafers (3~6 inch), and 100K filters/oscillators (VCXO, TCXO).

Our company vision is to be a reliable primary Microelectronic substrates supplier in today's world.

The CQT Group consists of five major plants with total floor area over 10,000 m². Our production machines include crystal growth furnace, wire saw, X-ray orientation, grinding machine, polishing machine, chamfering machine, CNC, REDOX chambers etc. Inspection equipment include Flatmaster 200, AOI, profilometer, optical imager, X-ray inspector etc. We are also equipped with Class 100 and 1000 clean rooms.

The CQT group is primarily known as the expert of hexagonal crystals, We master the manufacturing process of single & doubly rotated quartz blanks, and we can provide quartz of any orientation cut whether given by IRE , Miller index, Euler angle or conventional sign.

In addition to our leading quartz blank manufacturing capabilities, the last decade sees our major technological breakthroughs. We overcome the 3~6 inch ultra-thin wafer mass production barrier, obtained the reduction technology of black LiNbO3 & LiTaO3 wafers, and achieved 8 inch LiNbO3 wafer mass production successfully.

Competitive Advantages

1. Reliable partner: We are in this business for over 30 years, served over 200 customers in 20+ countries.
2. Complete production line: We do crystal orientation, wire cut, grinding, polishing, etching, flat/notch, surface inspecting, x-ray detecting etc. all in house!
3. State-of-the-art cleanroom: We have 3 Class1000 clean room, 1 Class100 work desk, complete wafer cleaning & drying process.
4. Efficient customer service: Prompt RFQ response & Order confirmation in 24 hrs, customization lead time in 4 weeks.