4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier

4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier

Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer ,silicon carbide waferis more suitable for high temperature and high power device.Silicon carbide wafercan be supplied in diameter 4inch,6inch , both 4H-N and 4H-SI. Please contact HMT for more detailed spec.

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Silicon Carbide(SiC) Substrate Wafer, SiC Ingots，SiC Epi Wafer, Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.