BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance

Brand Name:INFINEON
Model Number:BSC011N03LSI
Minimum Order Quantity:1
Payment Terms:T/T
Place of Origin:INFINEON
Price:Can discuss
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BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance


BSC011N03LSI Mosfet TDSON-8 With High Current And Low Internal Resistance


Product AttributeAttribute ValueSearch Similar
Infineon
MOSFET
RoHS:Details
Si
SMD/SMT
TDSON-8
N-Channel
1 Channel
30 V
230 A
1.1 mOhms
- 20 V, + 20 V
2 V
68 nC
- 55 C
+ 150 C
96 W
Enhancement
OptiMOS
Reel
Cut Tape
MouseReel
Brand:Infineon Technologies
Configuration:Single
Fall Time:6.2 ns
Forward Transconductance - Min:80 S
Height:1.27 mm
Length:5.9 mm
Product Type:MOSFET
Rise Time:9.2 ns
5000
Subcategory:MOSFETs
Transistor Type:1 N-Channel
Typical Turn-Off Delay Time:35 ns
Typical Turn-On Delay Time:6.4 ns
Width:5.15 mm
Part # Aliases:BSC11N3LSIXT SP000884574 BSC011N03LSIATMA1
Unit Weight:0.003683 oz
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BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance

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