300V 5A 50ns 2-Pin DO-201AD Ultra Fast Switching Diode

Brand Name:Huixin
Certification:ISO14001 ISO9001 ISO/TS16949 UL
Model Number:HER504 DO-27
Minimum Order Quantity:1250 PCS
Delivery Time:2-4Weeks
Payment Terms:T/T, Paypal, Cash
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Location: Dongguan Guangdong China
Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China
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Product Details

Rectifier Diode Switching 300V 5A 50ns 2-Pin DO-201AD Ultra Fast Switching Diode


HER501~HER508
5.0Amp High Efficiency Silicon Rectifiers

5.0amp High Efficient Rectifiers Voltage Range: 50 To 1000 Volts


HER501~HER508 DO-27 Datasheet.pdf


Features:


  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • Open Junction chip Low reverse leakage
  • High forward surge current capability
  • High temperature soldering guaranteed 250 C/10 seconds at terminals

Mechanical Data:

  • Case : Molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Polarity symbol marking on body
  • Mounting Position : Any
  • Weight : 0.0345 ounce, 0.98 grams

Maximum Ratings And Electrical Characteristics:

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.


ParameterSYMBOLSHER 501HER 502HER 503HER 504HER 505HER 506HER 507HER 508UNITS
Maximum repetitive peak reverse voltageVRRM501002003004006008001000V
Maximum RMS voltageVRMS3570140210280420560700V
Maximum DC blocking voltageVDC501002003004006008001000V
Maximum average forward rectified current at TL =100 CI(AV)5.0A
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated loadIFSM175.0A
Maximum instantaneous forward voltage at 5.0AVF1.01.41.7V
Maximum DC reverse current T A =25 C at rated DC blocking voltage TA=125 CIR5.0
200
u A
Maxinum reverse recovery time(Note 1)Trr5075ns
Typical junction capacitance (Note2)CJ80.0pF
Typical thermal resistanceRqJA45.0C/W
Operating junction and storage temperature rangeTJ,TSTG-55 to +150C

Note: 1.Reverse recovery condition IF =0.5A,IR =1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.



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300V 5A 50ns 2-Pin DO-201AD Ultra Fast Switching Diode

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