FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface
Brand Name:CYPRESS
Certification:ROHS
Model Number:FM24CL04B
Minimum Order Quantity:10pcs
Delivery Time:1-3Days
Payment Terms:T/T, Western Union，Paypal
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Location:
Shenzhen Guangdong China
Address:
Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031
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Product Details
FM24CL04B-GTR Flash Memory Chip 4Kbit Fast 2-wire Serial interface Serial FRAM Flash
Description
The FM24CL04B is a 4-Kbit nonvolatile memory employing an advanced
ferroelectric process. A ferroelectric random access memory or
F-RAM is nonvolatile and performs reads and writes similar to a
RAM. It provides reliable data retention for 151 years while
eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories. Unlike EEPROM, the FM24CL04B performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence without
the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes than
EEPROM since write operations do not require an internally elevated
power supply voltage for write circuits. The FM24CL04B is capable
of supporting 1014 read/write cycles, or 100 million times more
write cycles than EEPROM. These capabilities make the FM24CL04B
ideal for nonvolatile memory applications, requiring frequent or
rapid writes. Examples range from data logging, where the number of
write cycles may be critical, to demanding industrial controls
where the long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with less
overhead for the system. The FM24CL04B provides substantial
benefits to users of serial (I2C) EEPROM as a hardware drop-in
replacement. The device specifications are guaranteed over an
industrial temperature range of –40 C to +85 C.
Features
■ 4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See Data Retention and Endurance
on page 10)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast 2-wire Serial interface (I2C)
❐ Up to 1-MHz frequency
❐ Direct hardware replacement for serial (I2C) EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Low power consumption
❐ 100 A active current at 100 kHz
❐ 3 A (typ) standby current
■ Voltage operation: VDD = 2.7 V to 3.65 V
■ Industrial temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant
■ 4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See Data Retention and Endurance
on page 10)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast 2-wire Serial interface (I2C)
❐ Up to 1-MHz frequency
❐ Direct hardware replacement for serial (I2C) EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Low power consumption
❐ 100 A active current at 100 kHz
❐ 3 A (typ) standby current
■ Voltage operation: VDD = 2.7 V to 3.65 V
■ Industrial temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant
Applications
Industrial, Communications & Networking
FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface
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