LN LiNbO3 Q Switch Crystals Trigonal Substrate Material For Integrated Optoelectronic Devices
Brand Name:CRYLINK
Certification:Iso9001
Model Number:CRYLINK-LiNbO3 Crystal
Minimum Order Quantity:1 Pieces
Delivery Time:3-4 weeks
Payment Terms:TT
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Shanghai Shanghai China
Address:
No.200, Zgaoxian Road, Jiading Zone, Shanghai, China
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Product Details
LiNbO3 crystal has been widely used in optical waveguide and
optical communication technology because of its excellent
electro-optical properties. It is an ideal substrate material for
many integrated optoelectronic devices. Because of the large
electro-optic coefficient of LiNbO3, the half-wave voltage is low.
The electro-optic effect of LiNbO3 crystal is usually used to
modulate the optical signal. Electro-optic modulation is divided
into longitudinal and transverse, and LiNbO3 is mainly used in
transverse modulation. It has been widely used in medium and low
power solid-state lasers.
Physical and optical properties
| Chemical formula | LiNbO3 |
| Crystal structure | trigonal |
| Space group | R3C |
| Density | 4.64 g/cm3 |
| Mohs hardness | 5 |
| Optical homogeneity | ~ 5 x 10-5 / cm |
| Transparency range | 420 5200 nm |
| Absorption coefficient | ~ 0.1 % / cm @ 1064 nm |
| Refractive indices at 1064 nm | ne = 2.146, no = 2.220 @ 1300 nm |
| ne = 2.156, no = 2.232 @ 1064 nm | |
| ne = 2.203, no = 2.286 @ 632.8 nm | |
| Sellmeier equations (, m) | no2 = 4.9048 + 0.11768 / (2 0.04750) 0.0271692 |
| ne2 = 4.5820 + 0.099169 / (2 0.04443) 0.0219502 | |
| Thermal expansion coefficient @ 25 °C | //a, 2.0 x 10-6 / K |
| //c, 2.2 x 10-6 / K | |
| Thermal conductivity | ~ 5 W/m/K @ 25 °C |
| Thermal optical coefficient | dno/dT = -0.874 x 10-6 / K at 1.4 m |
| dne/dT = 39.073 x 10-6 / K at 1.4 m |
LiNbO3 General specification for Q-Switch
| Refractive retardation | =Lnr22V/d |
| Electro-optic coefficients | R33=32pm/V |
| R31=10pm/V | |
| R22=6.8 pm/V | |
| Aperture | 4x4mm ~ 9x9mm |
| Length | 15~25mm |
| Tolerance of size | +/-0.1mm |
| Chamfer | <0.5mm x 45° |
| Accuracy of orientation | <5 arc min |
| Parallelism | <10 arc sec |
| Flatness | l/8 at 632.8 nm |
| Wavefront Distortion | <l/4 at 632.8 nm |
| Extinction Ratio | >400:1 @ 633nm, dia 6mm beam |
LiNbO3 specification for Optical waveguide
| Operating wavelength range | 1.525-1.605m |
| Extinction ratio | ＜20dB |
| Half wave voltage | ＜6V |
| DC bias voltage | ＜8V |
| Input characteristic impedance | 50 |
| Light reflection | ≤-50dB |
| Maximum input electric power | 20dBm |
| Maximum input optical power | 10-100mW |
| Storage temperature | -40-85℃ |
| Operating temperature | -40-70℃ |
LN LiNbO3 Q Switch Crystals Trigonal Substrate Material For Integrated Optoelectronic Devices
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