4" Silicon Epitaxial Wafer Top Layer Instrinct Silicon Layer / Phosphorus Doped Layer Ion Implantation Layer Silicon Sub

4" Silicon Epitaxial Wafer Top Layer Instrinct Silicon Layer / Phosphorus Doped Layer Ion Implantation Layer Silicon Sub

Silicon epitaxial wafer is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)

The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate’s crystalline structure.

Epilayer resistivity: <1 ohm-cm up to 150 ohm-cm

Epilayer thickness: < 1 um up to 150 um

Structure: N/N+, N-/N/N+, N/P/N+, N/N+/P-, N/P/P+, P/P+, P-/P/P+.

Wafer Application: Digital, Linear, Power, MOS, BiCMOS Devices.

Our advantages at a glance

1. Advanced epitaxy growth equipment and test equipment.

2. Offer the highest quality with low defect density and good surface roughness.

3. Strong research team support and technology support for our customers

PAM-XIAMEN Epitaxial Wafer Services Specifications:

• Diameters: 50mm,75mm,100mm, 125mm, 150mm

• Wafer orientation: <100>, <111>, <110>

• EPI thickness: 4μm to 150μm

• Dopants: Arsenic, phosphorus, boron

• Typical resistivity ranges

• 0.05 – 1,200 ohm-cm

• 3000 – 5,000 ohm-cm (intrinsic layers)

4" Silicon Epitaxial Wafer Top Layer Instrinct Silicon layer / Phosphorus Doped Layer/Ion Implantation Layer/Silicon Substrate

What is silicon epi wafer?

Epitaxy is a process in which an additional monocrystalline silicon layer is deposited on to the polished crystal surface of a silicon wafer. This process makes it possible to select the material properties independently of the polished substrate, and consequently to create wafers that have different properties in the substrate and the epitaxial layer. In many cases this is necessary for the semiconductor component’s function.

PAM-XIAMEN can offer you technology and wafer support, for more information, please visit our website: https://www.powerwaywafer.com,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.