Semiconductor CdZnTe Substrate Used For Diodes And Transistors, Ir Optical Window Or Disks, Opitical Components

Semiconductor CdZnTe Substrate Used For Diodes And Transistors, Ir Optical Window Or Disks, Opitical Components

Product Description

Single crystal (Ge)Germanium Wafer

PAM-XIAMENoffers semiconductor materials,Ge(Germanium) Single Crystals and Wafers grown by VGF / LEC

General Properties of Germanium Wafer

Grades and Application of Germanium wafer

Standard Specs of Germanium Crystal and wafer

Special size and orientation are available upon requested Wafers

Specification of Germanium Wafer

Germanium Wafer Process

In the germanium wafer production process, germanium dioxide from the residue processing is further purified in chlorination and hydrolysis steps.

1)High purity germanium is obtained during zone refining.

2)A germanium crystal is produced via the Czochralski process.

3)The germanium wafer is manufactured via several cutting, grinding, and etching steps.

4)The wafers are cleaned and inspection. During this process, the wafers are single side polished or double side polished according to custom requirement, epi-ready wafer comes.

5)The wafers are packed in single wafer containers, under a nitrogen atmosphere.

Application:

Germanium blank or window are used in night vision and thermographic imaging solutions for commercial security, fire fighting and industrial monitoring equipment. Also, they are used as filters for analytical and measuring equipment, windows for remote temperature measurement, and mirrors for lasers.

Thin Germanium substrates are used in III-V triple-junction solar cells and for power Concentrated PV (CPV) systems.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.