C(0001) 6H N Type SiC Wafer, Research Grade,Epi Ready, 2”Sizes

C(0001) 6H N Type SiC Wafer, Research Grade,Epi Ready, 2”Sizes

PAM-XIAMEN offers semiconductor silicon carbide wafers,6HSiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
Here shows detail specification

Here Shows Detail Specification:
SILICON CARBIDE MATERIAL PROPERTIES

6H N Type SiC Wafer, Research Grade,Epi Ready, 2”Sizes

Here we show you and detail spec as follows:

research grade, epi-ready 6H-SiC(0001) for molecular beam epitaxy growths.
Specs for 6H-SiC(0001):
Substrate, SiC,
orientation <0001>0deg +/-0.5deg.
dia. 50.80+/-0.38 mm
thickness: 0.43 +/-0.025mm
one side epi polishing
N-type, N-doped is 1E 18-19 /CM3
Res. is 0.02~0.1 Ω•cm
research grade micropipe density < = 15cm-2
double side polished with Si face CMP,C face optical polish

SiC crystal growth
Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H- SiC crystals are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.

lattice parameter
The lattice constant, or lattice parameter, refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, all of the constants are equal and we only refer to a. Similarly, in hexagonal crystal structures, the a andb constants are equal, and we only refer to the a and c constants. A group of lattice constants could be referred to as lattice parameters. However, the full set of lattice parameters consist of the three lattice constants and the three angles between them.
For example the lattice constant for a common carbon diamond is a = 3.57Å at 300 K. The structure is equilateral although its actual shape can not be determined from only the lattice constant. Furthermore, in real applications, typically the average lattice constant is given. As lattice constants have the dimension of length, their SI unit is the meter. Lattice constants are typically on the order of several angstroms (i.e. tenths of a nanometre). Lattice constants can be determined using techniques such as X-ray diffraction or with an atomic force microscope.
In epitaxial growth, the lattice constant is a measure of the structural compatibility between different materials. Lattice constant matching is important for the growth of thin layers of materials on other materials; when the constants differ, strains are introduced into the layer, which prevents epitaxial growth of thicker layers without defects.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.