10A 100V Dual Schottky Barrier Rectifier Diode MBR10200CT Mbr10200ct Schottky Diode
Brand Name:trusTec
Certification:ROHS
Model Number:MBR10100CT
Minimum Order Quantity:1K PCS
Delivery Time:10 work days fresh products
Payment Terms:T/T
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Location:
Changzhou Jiangsu China
Address:
No. 38 Hongye Road, New Northern District, Changzhou City, 213033, Jiangsu Province, China
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Product Details
Low Leakage High Efficiency Dual Schottky Barrier Rectifier Diode
10 Ampere MBR10100CT MBR10200CT
MBR1020CT THRU MBR10200CT
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 20 to 200 Volts Forward Current - 10 Ampere
Product Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.25 ”(6.35mm) from case
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Mechanical Data
Case: JEDEC TO-220AB molded plastic
Terminals: Leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight:0.08 ounce, 2.24 grams
MAXIMUM RATINGS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for
capacitive load current derate by 20%.
| SYMBOLS | MBR 1020 CT | MBR 1030 CT | MBR 1040 CT | MBR 1050 CT | MBR 1060 CT | MBR 1070 CT | MBR 1080 CT | MBR 1090 CT | MBR 10100 CT | MBR 10150 CT | MBR 10200 CT | UNITS | |
| Maximum repetitive peak reverse voltage | VRRM | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 150 | 200 | VOLTS |
| Maximum RMS voltage | VRMS | 14 | 21 | 28 | 35 | 42 | 49 | 56 | 63 | 70 | 105 | 140 | VOLTS |
| Maximum DC blocking voltage | VDC | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 150 | 200 | VOLTS |
| Maximum average forward rectified current 0.375”(9.5mm) lead length(see fig.1) | I(AV) | 10.0 | Amps | ||||||||||
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | IFSM | 150.0 | Amps | ||||||||||
| Maximum instantaneous forward voltage at 5.0A | VF | 0.65 | 0.75 | 0.85 | 0.95 | Volts | |||||||
Maximum DC reverse current TA=25℃ at rated DC blocking voltage TA=100℃ | IR | 0.2 | 1 | mA | |||||||||
| 15 | 20 | ||||||||||||
| Typical junction capacitance (NOTE 1) | CJ | 550 | 450 | pF | |||||||||
| Typical thermal resistance (NOTE 2) | RθJC | 2 | ℃/W | ||||||||||
| Operating junction temperature range | TJ, | -65 to +150 | ℃ | ||||||||||
| Storage temperature range | TSTG | -65 to +150 | ℃ | ||||||||||
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case.
CHARACTERISTIC CURVES
10A 100V Dual Schottky Barrier Rectifier Diode MBR10200CT Mbr10200ct Schottky Diode
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