1N5817 1N5818 1N5819 Schottky Diode IN5817 IN5818 IN5819 Plastic Case

Brand Name:trusTec
Certification:ROHS
Model Number:1N5817 THUR 1N5819
Minimum Order Quantity:5K PCS
Delivery Time:10 work days fresh products
Payment Terms:T/T
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Location: Changzhou Jiangsu China
Address: No. 38 Hongye Road, New Northern District, Changzhou City, 213033, Jiangsu Province, China
Supplier`s last login times: within 2 hours
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Product Details
1N5817 1N5818 1N5819 schottky diode IN5817 IN5818 IN5819 Plastic Case
1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere

Dimension



Product Features


Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Guardring for overvoltage protection
Low power loss,high efficiency
High current capability,low forward voltage drop
High surge capability
For use in low voltage,high frequency inverters, free wheeling,and polarity protection applications
High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.012 ounce, 0.33 grams
MAXIMUM RATINGS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.
SYMBOLS1N58171N58181N5819UNITS
Maximum repetitive peak reverse voltage
VRRM
20
30
40
VOLTS
Maximum RMS voltage
VRMS
142128
VOLTS
Maximum DC blocking voltage
VDC
20
30
40
VOLTS
Maximum average forward rectified current 0.375”(9.5mm) lead length at TL=90
I(AV)
1.0
Amp
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
IFSM
25.0Amps
Maximum instantaneous forward voltage at 1.0A
VF
0.450
0.550
0.600
Volts
Maximum DC reverse current TA=25
at rated DC blocking voltage TA=100
IR
0.5
10.0
mA
Typical junction capacitance (NOTE 1)
CJ
110.0
pF
Typical thermal resistance (NOTE 2)
RθJA
50.0
℃/W
Operating junction and storage temperature range
TJ,TSTG
-65 to +125
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
CHARACTERISTIC CURVES
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1N5817 1N5818 1N5819 Schottky Diode IN5817 IN5818 IN5819 Plastic Case

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