500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
Brand Name:ZG
Certification:CE
Model Number:MS
Minimum Order Quantity:1 piece
Delivery Time:3 working days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Contact Now
Add to Cart
Active Member
Location:
Zhengzhou Henan China
Address:
No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
Supplier`s last login times:
within 48 hours
Product Details
Company Profile
Product Details
GaAs Based Epi Wafer
We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your GaAs epi layer structure . Please contact us for more product information or discuss your epi layer structure .
GaAs Based Epi Wafer Capability
Our reactors are configured for a variety of material systems and
process conditions. We can provide custom epitaxy for a variety of
device applications ranging from LEDs to HEMTs .
| Material Capability | Substrate | Wafer Size |
|---|---|---|
| GaAs/GaAs | GaAs wafer | Up to 4 inch |
| LT-GaAs/GaAs | GaAs wafer | Up to 4 inch |
| AlAs/GaAs | GaAs wafer | Up to 4 inch |
| InAs/GaAs | GaAs wafer | Up to 4 inch |
| AlGaAs/GaAs | GaAs wafer | Up to 4 inch |
| InGaAs/GaAs | GaAs wafer | Up to 4 inch |
| InGaP/GaAs | GaAs wafer | Up to 4 inch |
| GaAsP/GaAs | GaAs wafer | Up to 4 inch |
Optoelectronic applications:
Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides.
Electronic applications:
FETs, HBTs, HEMTs, diodes, Microwave devices.
Epi Layer Structure ( HEMT / HBT )
| Growth | MOCVD |
|---|---|
| Dopant source | P type / Be , N type / Si |
| Cap layer | i-GaAs layer |
| Active layer | n-AlGaAs layer |
| Space layer | i-AlGaAs layer |
| Buffer layer | i-GaAs layer |
| Substrate | Ø 3" / Ø 4" GaAs wafer |
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
Inquiry Cart
0