2 inch InAs Wafer Indium Arsenide one / two sides polished
Brand Name:ZG
Certification:CE
Model Number:MS
Minimum Order Quantity:1 piece
Delivery Time:3 working days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
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Active Member
Location:
Zhengzhou Henan China
Address:
No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
Supplier`s last login times:
within 48 hours
Product Details
Company Profile
Product Details
InAs wafer ( Indium Arsenide )
We provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch . InAs crystal is a compound formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " InAs products with wide choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information .
III-V Compound Wafer
We provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer .
Electrical and Doping Specification
Product Specification
| Growth | LEC |
|---|---|
| Diameter | Ø 2" / Ø 3" |
| Thickness | 500 um ~ 625 um |
| Orientation | <100> / <111> / <110> or others |
| Off orientation | Off 2° to 10° |
| Surface | One side polished or two sides polished |
| Flat options | EJ or SEMI. Std . |
| TTV | <= 10 um |
| EPD | <= 15000 cm-2 |
| Grade | Epi polished grade / mechanical grade |
| Package | Single wafer container |
2 inch InAs Wafer Indium Arsenide one / two sides polished
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