SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER
Brand Name:ZG
Certification:CE
Model Number:MS
Minimum Order Quantity:10000 pieces
Delivery Time:5-8 working days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
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Location:
Zhengzhou Henan China
Address:
No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
Supplier`s last login times:
within 48 hours
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Product Details
Company Profile
Product Details
Silicon Carbide (SiC) Block
Silicon Carbide Block Good Thermal Conductivity Good Thermal Shock Resistance Good Abrasion Resistance
Due to our large output capacity and strong molding ability for customization production, our company has exported our products to many international markets. Our products are certified according to requirements of customers.
We continue to innovate, improve, and enhance as well as integrate the resources internally and externally to strengthen the flexibility of our company and the competitiveness of our products, and provide both old and new customers with best service.
Application:
Grinding process of semiconductor silicon wafer
Grinding process of LED sapphire wafer
Thinning process of LED wafer
Feature requirements:
Good thermal conductivity
Good thermal shock resistance
Good abrasion resistance
| Performance | UNIT | HS-A | HS-P | HS-XA |
| Grain Size | μm | 4-10 | 4-10 | 4-10 |
| Density | g/cm | ≥3.1 | 3.0-3.1 | >3.1 |
| Hardness (Knoop) | Kg/mm² | 2800 | 2800 | 2800 |
| Flexural Strength 4 pt @ RT | MPa*m1/2 | 385 | 240 | 420 |
| *10³1b/in² | 55 | 55 | 55 | |
| Compressive Strength @ RT | Mpa | 3900 | 3900 | |
| *10³1b/in² | 560 | 560 | ||
| Modulus of Elasticity @ RT | Gpa | 410 | 400 | 410 |
| *10³1b/in² | 59 | 58 | 59 | |
| Weibull Modulus (2 parameter) | 8 | 19 | 12 | |
| Poisson Ratio | 0.14 | 0.14 | 0.14 | |
| Fracture Toughness @ RT Double Torsion & SENB | MPa*m1/2 | 8 | 8 | 8 |
| *1³1b/in²in½ | ||||
| Coefficient of Thermal Expansion RT to 700℃ | X10-6mm/mmK | 4.02 | 4.2 | 4.02 |
| X10-6 in/in°F | 2.2 | 2.3 | 2.2 | |
| Maximum Service Temp.Air Mean Specific Heat @ RT | °C | 1900 | 1900 | 1900 |
| J/gmK | 0.67 | 0.59 | 0.67 | |
| Thermal Conductivity @ RT | W/mK | 125.6 | 110 | 125.6 |
| Btu/ft h°F | 72.6 | 64 | 72.6 | |
| @200°C | W/mK | 102.6 | 102.6 | |
| Btu/ft h°F | 59.3 | 59.3 | ||
| @400°C | W/mK | 77.5 | 77.5 | |
| Btu/ft h°F | 44.8 | 44.8 | ||
| Permeability @ RT to 1000°C | 31MPa below No gas leakage | |||
| Electrical Resistivity @ RT | Ohm-cm | 102-106 | N/A | 102-106 |
| Emissivity | 0.9 | 0.9 | 0.9 | |
Why better than others:
Available in various specifications, also provide customized services
Stable quality and fast delivery
SiC block diameter from 120mm to 480mm in stock
Save time of sample loading and unloading process
Acceptable higher thinning rate
SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER
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