Thk 430um Sapphire Substrate Crystal Orientation C/M0.2
Model Number:JDCD08-001-001
Payment Terms:T/T
Packaging Details:Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Surface Orientation:A-Plane(11-20)
Material:High purity Al₂O₃(＞99.995%)
Thickness:430±15μm
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Shanghai Shanghai China
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
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Product Details
Thk 430μm Sapphire Substrate Wafer Crystal Orientation C/M0.2, OF Length (Mm) 16 LED Chip
JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430μm,
crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate
material
In practical production, the sapphire wafer is made by cutting the
crystal bar and then grinding and polishing. Generally, the
semiconductor wafer is cut into a wafer by wire cutting or
multi-wire cutting machine.
Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.
Parameters | Specification | ||
| Unit | Target | Tolerance | |
| Material | High purity Al2O3(＞99.995%) | ||
| Diameter | mm | 50.8 | ±0.10 |
| Thickness | μm | 430 | ±15 |
| Surface Orientation | C-Plane(0001) | ||
| -Off Angle toward M-axis | degree | 0.20 | ±0.10 |
| -Off Angle toward A-axis | degree | 0.00 | ±0.10 |
| Flat Orientation | A-Plane(11-20) | ||
| -Flat Off-set Angle | degree | 0.0 | ±0.2 |
| Flat Lenght | mm | 16.0 | ±1 |
| R-plane | R9 | ||
| Front surface Roughness(Ra) | nm | ＜0.3 | |
| Back surface Roughness | μm | 0.8~1.2μm | |
| Front surface Quality | Mirror Polished,EPI-Ready | ||
| Wafer edge | R-type | ||
| Chamfer amplitude | μm | 80-160 | |
| Included angle radian between flat edge and round edge | mm | R=9 | |
| TTV | μm | ≤5 | |
| LTV(5x5mm) | μm | ≤1.5 | |
| Bow | μm | 0~-5 | |
| Warp | μm | ≤10 | |
| Laser mark | As customer required | ||
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Thk 430um Sapphire Substrate Crystal Orientation C/M0.2
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