P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm

Brand Name:GaNova
Certification:UKAS/ISO9001:2015
Model Number:JDCD03-002-008
Delivery Time:3-4 week days
Payment Terms:T/T
Place of Origin:Suzhou China
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Location: Shanghai Shanghai China
Address: Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
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Product Details

P-MOS Grade 2-Inch SiC Substrate P-Level P-SBD Grade D Grade 150.0 mm +0mm/-0.2mm

JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave devices


Overview

At the system level, this results in highly compact solutions with vastly improved energy efficiency at reduced cost. The rapidly growing list of current and projected commercial applications utilizing SiC technologies includes switching power supplies, inverters for solar and windmill energy generation, industrial motor drives, HEV and EV vehicles, and smart-grid power switching.


Property

P-MOS GradeP-SBD GradeD Grade
Crystal Form4H
PolytypeNone PermittedArea≤5%
(MPD) a≤0.2 /cm2≤0.5 /cm2≤5 /cm2
Hex PlatesNone PermittedArea≤5%
Hexagonal PolycrystalNone Permitted
Inclusions aArea≤0.05%Area≤0.05%N/A
Resistivity0.015Ω•cm—0.025Ω•cm0.015Ω•cm—0.025Ω•cm0.014Ω•cm—0.028Ω•cm
(EPD)a≤4000/cm2≤8000/cm2N/A
(TED)a≤3000/cm2≤6000/cm2N/A
(BPD)a≤1000/cm2≤2000/cm2N/A
(TSD)a≤600/cm2≤1000/cm2N/A
Stacking Fault≤0.5% Area≤1% AreaN/A

Surface Metal Contamination


(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2

Diameter150.0 mm +0mm/-0.2mm
Surface OrientationOff-Axis:4°toward <11-20>±0.5 °
Primary Flat Length47.5 mm ± 1.5 mm
Secondary Flat LengthNo Secondary Flat
Primary Flat OrientationParallel to<11-20>±1°
Secondary Flat OrientationN/A
Orthogonal Misorientation±5.0°
Surface FinishC-Face:Optical Polish,Si-Face:CMP
Wafer EdgeBeveling

Surface Roughness

(10μm×10μm)

Si Face Ra≤0.20 nm ; C Face Ra≤0.50 nm
Thickness a350.0μm± 25.0 μm
LTV(10mm×10mm)a≤2μm≤3μm
(TTV)a≤6μm≤10μm
(BOW) a≤15μm≤25μm≤40μm
(Warp) a≤25μm≤40μm≤60μm
Chips/IndentsNone Permitted ≥0.5mm Width and DepthQty.2 ≤1.0 mm Width and Depth

Scratches a

(Si Face,CS8520)

≤5 and Cumulative Length≤0.5×Wafer Diameter

≤5 and Cumulative Length≤1.5×Wafer

Diameter

TUA(2mm*2mm)≥98%≥95%N/A
CracksNone Permitted
ContaminationNone Permitted
PropertyP-MOS GradeP-SBD GradeD Grade
Edge Exclusion3mm

Remark: 3mm edge exclusion is used for the items marked with a.


About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.


FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

China P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm supplier

P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm

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