4 Inch 4H-SiC Substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm For Power Microwave
Brand Name:GaNova
Certification:UKAS/ISO9001:2015
Model Number:JDCD03-002-002
Delivery Time:3-4 week days
Payment Terms:T/T
Place of Origin:Suzhou China
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Location:
Shanghai Shanghai China
Address:
Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
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Product Details
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices
Overview
SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability.
4inch 4H-SiC Semi-insulating substrate | |||
| Product performance | P level | D level | |
| Crystal form | 4H | ||
| Polytypic | Not allow | Area≤5% | |
| Micropipe Densitya | ≤0.3/cm2 | ≤5/cm2 | |
| Six square empty | Not allow | Area≤5% | |
| Hexagon surface hybrid crystal | Not allow | Area≤5% | |
| wrappage a | Area≤0.05% | N/A | |
| Resistivity | ≥1E9Ω·cm | ≥1E5Ω·cm | |
(0004) XRDHalf height width of rocking curve (FWHM) | ≤45Arcsecond | N/A | |
| Diameter | 100.0mm+0.0/-0.5mm | ||
| Surface orientation | {0001}±0.2° | ||
| Length of main reference edge | 32.5 mm ± 2.0 mm | ||
| Length of secondary reference edge | 18.0 mm ± 2.0 mm | ||
| Main reference plane orientation | parallel<11-20> ± 5.0˚ | ||
| Secondary reference plane orientation | 90 ° clockwise to the main reference plane ˚ ± 5.0 ˚, Si face up | ||
| surface preparation | C-Face: Mirror Polishing, Si-Face: Chemical Mechanical Polishing (CMP) | ||
| The edge of the wafer | angle of chamfer | ||
Surface roughness(5μm×5μm) | Si face Ra＜0.2 nm | ||
| thickness | 500.0±25.0μm | ||
| LTV(10mm×10mm)a | ≤2µm | ≤3µm | |
| TTVa | ≤6µm | ≤10µm | |
| Bowa | ≤15µm | ≤30µm | |
| Warpa | ≤25µm | ≤45µm | |
| Broken edge / gap | Collapse edges of a length and a width of 0.5mm are not allowed | ≤2 and each length and width of 1.0mm | |
| scratcha | ≤4,And the total length is 0.5 times the diameter | ≤5 ,And the total length is 1.5 times the diameter | |
| flaw | not allow | ||
| pollution | not allow | ||
| Edge removal | 3mm | ||
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
4 Inch 4H-SiC Substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm For Power Microwave
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