375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates
Brand Name:GaNova
Certification:UKAS/ISO9001:2015
Model Number:JDCD01-001-019
Delivery Time:3-4 week days
Payment Terms:T/T
Place of Origin:Suzhou China
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Shanghai Shanghai China
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
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Product Details
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates
2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer
Overview
The standard in semiconductor material industry specifies the
method for testing the surface roughness of GaN Single Crystal
Substrate with an atomic force microscope, which applies to GaN
single crystal substrates grown by chemical vapor deposition and
other methods with a surface roughness of less than 10nm.
| 2-inch Free-standing U-GaN/SI-GaN Substrates | |||||||
Excellent level (S) | Production level(A) | Research level (B) | Dummy level (C) | Note: (1) Useable area: edge and macro defects exclusion (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o | |||
| S-1 | S-2 | A-1 | A-2 | ||||
| Dimensions | 50.8 ± 1 mm | ||||||
| Thickness | 350 ± 25 μm | ||||||
| Orientation flat | (1-100) ± 0.5o, 16 ± 1 mm | ||||||
| Secondary orientation flat | (11-20) ± 3o, 8 ± 1 mm | ||||||
| Resistivity (300K) | < 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50) or > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50) | ||||||
| TTV | ≤ 15 μm | ||||||
| BOW | ≤ 20 μm ≤ 40 μm | ||||||
| Ga face surface roughness | < 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy) | ||||||
| N face surface roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) | ||||||
| Package | Packaged in a cleanroom in single wafer container | ||||||
| Useable area | > 90% | >80% | >70% | ||||
| Dislocation density | <9.9x105 cm-2 | <3x106 cm-2 | <9.9x105 cm-2 | <3x106 cm-2 | <3x106 cm-2 | ||
| Orientation:C plane (0001) off angle toward M-axis | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) | ||||
| Macro defect density (hole) | 0 cm-2 | < 0.3 cm-2 | < 1 cm-2 | ||||
| Max size of macro defects | < 700 μm | < 2000 μm | < 4000 μm | ||||
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates
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