GaN Gallium Nitride Wafer Thickness 325um - 375um Freestanding
Brand Name:GaNova
Certification:UKAS/ISO9001:2015
Model Number:JDCD01-001-009
Delivery Time:3-4 week days
Payment Terms:T/T
Place of Origin:Suzhou China
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Shanghai Shanghai China
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
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Product Details
5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm
5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer
The freestanding GaN substrate has a great potential to
homo-epitaxy of optoelectronic and electronic devices with high
reliability and performances. Here, we realized the growth of
freestanding bulk GaN on dual-stack multilayer graphene as an
insertion layer by the hydride vapor phase epitaxy (HVPE) method.
| M face Free-standing GaN Substrates | ||||
| Item | GaN-FS-M-U-S | GaN-FS-M-N-S | GaN-FS-M-SI-S | Remarks: A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface. |
| Dimensions | 5 x 10 mm2 | |||
| Thickness | 350 ±25 µm | |||
| Orientation | M plane (1- 100) off angle toward A-axis 0 ±0.5° M plane (1- 100) off angle toward C-axis - 1 ±0.2° | |||
| Conduction Type | N-type | N-type | Semi-Insulating | |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 106 Ω·cm | |
| TTV | ≤ 10 µm | |||
| BOW | - 10 µm ≤ BOW ≤ 10 µm | |||
| Front Surface Roughness | < 0.2 nm (polished)； or < 0.3 nm (polished and surface treatment for epitaxy) | |||
| Back Surface Roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) | |||
| Dislocation Density | From 1 x 105 to 3 x 106 cm-2 | |||
| Macro Defect Density | 0 cm-2 | |||
| Useable Area | > 90% (edge exclusion) | |||
| Package | Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere | |||
Appendix: The diagram of miscut angle
If δ1= 0 ±0.5 degree, then M plane (1- 100) off angle toward A-Axis is 0 ±0.5 degree.
If δ2= - 1 ±0.2 degree, then M plane (1- 100) off angle toward C-Axis is - 1 ±0.2 degree.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
GaN Gallium Nitride Wafer Thickness 325um - 375um Freestanding
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