4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
Brand Name:GaNova
Certification:UKAS/ISO9001:2015
Model Number:JDWY03-001-024
Delivery Time:3-4 week days
Payment Terms:T/T
Place of Origin:Suzhou China
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer
The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect measurements. Samples with a range of Mg-doping concentrations were prepared by metalorganic chemical vapor phase deposition.
A number of phenomena are observed as the dopant density is increased to the high values typically used in device applications: the effective acceptor energy depth decreases from 190 to 112 meV, impurity conduction at low temperature becomes more prominent, the compensation ratio increases, and the valence band mobility drops sharply.
| 4-inch Mg-doped GaN/Sapphire Substrates | ||
| Item | GaN-T-C-P-C100 | |
| Dimensions | 100 ± 0.2mm | |
| Thickness/Thickness STD | 4.5 ± 0.5 μm / < 3% | |
| Orientation | C plane (0001) off angle toward A-axis 0.2 ± 0.1 ° | |
| Orientation Flat of GaN | (1-100) 0 ± 0.2 °, 30 ± 1 mm | |
| Conduction Type | P-type | |
| Resistivity (300K) | < 10 Ω·cm | |
| Carrier Concentration | > 1 x 1017 cm-3 (doping concentration of p+GaN ≥ 5 x 1019cm-3) | |
| Mobility | > 5 cm2/V·s | |
| *XRD FWHMs | (0002) < 300arcsec,(10-12) < 400arcsec | |
| Structure | ~ 0.5 μm p+GaN/~ 1.5 μm p-GaN /~ 2.5 μm uGaN /~ 25 nm uGaN buffer/430 ± 25 μm sapphire | |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ± 0.1 ° | |
| Orientation Flat of Sapphire | (11-20) 0 ± 0.2 °, 30± 1 mm | |
| Sapphire Polish | Single side polished (SSP) / Double side polished (DSP) | |
| Useable Area | > 90% (edge and macro defects exclusion) | |
| Package | Packaged in a cleanroom in containers: single wafer box (< 3 PCS) or cassette (≥ 3 PCS) | |
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
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We are factory.
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Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
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Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
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