5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
Brand Name:GaNova
Certification:UKAS/ISO9001:2015
Model Number:JDCD01-001-006
Delivery Time:3-4 week days
Payment Terms:T/T
Place of Origin:Suzhou China
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Location:
Shanghai Shanghai China
Address:
Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer
Overview
Thin Epi wafers are commonly used for leading edge MOS devices.
Thick Epi or Multi-layered epitaxial wafers are used for the
devices mainly to control electric power, and they are contributing
to improving the efficiency of energy consumption.
Gallium Nitride (GaN) substrate is a high-quality single-crystal
substrate. It is made with original HVPE method and wafer
processing technology, which has been originally developed for many
years. The features are high crystalline, good uniformity, and
superior surface quality.
These GaN wafers realize unprecedented ultra-bright laser diodes
and high-efficiency power devices for use in projector light
sources, inverters for electric vehicles, and other applications.
| A face Free-standing GaN Substrates | ||||
| Item | GaN-FS-A-U-S | GaN-FS-A-N-S | GaN-FS-A-SI-S |
A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface. |
| Dimensions | 5 x 10 mm2 | |||
| Thickness | 350 ±25 µm | |||
| Orientation | A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis - 1 ±0.2° | |||
| Conduction Type | N-type | N-type | Semi-Insulating | |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 106 Ω·cm | |
| TTV | ≤ 10 µm | |||
| BOW | - 10 µm ≤ BOW ≤ 10 µm | |||
| Front Surface Roughness | < 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy) | |||
| Back Surface Roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) | |||
| Dislocation Density | From 1 x 105 to 3 x 106 cm-2 | |||
| Macro Defect Density | 0 cm-2 | |||
| Useable Area | > 90% (edge exclusion) | |||
| Package | Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere | |||
Appendix: The diagram of miscut angle
If δ1= 0 ±0.5°, then A plane (11-20) off angle toward M-Axis is 0 ±0.5°.
If δ2= - 1 ±0.2°, then A plane (11-20) off angle toward C-Axis is - 1 ±0.2°.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
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