High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A
Brand Name:Infineon
Model Number:IKW25N120T2
Minimum Order Quantity:10pcs
Delivery Time:3-5work days
Payment Terms:T/T, Western Union, MoneyGram, PayPay
Place of Origin:Original Factory
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Shenzhen Guangdong China
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong
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Product Details
IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package
Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors
Description
1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package
Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard
TO-247 packages to provide best-in-class performance for industrial and energy-saving applications.
The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing
dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. Infineon 1200V Gen8
IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating
of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin
wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction
temperature up to +175°C.
Features
Lowest VCEsat drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery anti-parallel Emitter Controlled diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Applications
Home appliances
Motor control and drives
Uninterruptible Power Supplies (UPS)
- Specifications
Product Attribute Attribute Value Product Category: IGBT Transistors Si TO-247-3 Through Hole Single 1.2 kV 1.7 V - 20 V, + 20 V 50 A 349 W - 40 C + 175 C Trenchstop IGBT4 Tube Gate-Emitter Leakage Current: 200 nA Height: 20.95 mm Length: 15.9 mm Product Type: IGBT Transistors - Shopping Guide
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| Shipping rates | After confirming the order, we will evaluate the shipping cost based on the weight of the goods | |
| Shipping option | We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping. | |
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Returning | Returning | Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping. |
| Warranty | All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation | |
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High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A
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