STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W

STGW80H65DFB Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors

Applications

• Photovoltaic inverters

• High frequency converters

Specifications

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A

• Tight parameter distribution

• Safe paralleling

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Shopping Guide

Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics, display modules, intelligent electronics, new energy, the Internet of things, 5G productsand other fields，With high-quality products, reasonable prices, rapid distributionand timely service, we can provide customers with the most cost-effective products and save customers a lot of time.