MT41K64M16TW-107 IT J Memory IC Chip DRAM DDR3 933MHz 1Gbit 63mA 64Mx16 FBGA-96

MT41K64M16TW-107 IT:J Memory IC DRAM DDR3 933 MHz 1Gbit 63mA 64Mx16 FBGA-96

Specifications

Description

The 1.35V DDR3L SDRAM device is a low-voltage ver-sion of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.

Key Timing Parameters

Notes: 1. Backward compatible to 1066, CL = 7 (-187E).

2. Backward compatible to 1333, CL = 9 (-15E).

3. Backward compatible to 1600, CL = 11 (-125).

Features

• VDD = VDDQ = +1.35V (1.283V to 1.45V)

• Backward compatible to VDD = VDDQ = 1.5V ±0.075V

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 0°C to 95°C

– 64ms, 8192-cycle refresh at 0°C to 85°C

– 32ms at 85°C to 95°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

Trading Guides

Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics, display modules, intelligent electronics, new energy, the Internet of things, 5G productsand other fields，With high-quality products, reasonable prices, rapid distributionand timely service, we can provide customers with the most cost-effective products and save customers a lot of time.