MT41K128M16JT-125 Memory DDR3L SDRAM IC 2Gbit Parallel 800MHz FBGA96

MT41K128M16JT-125 Memory IC SDRAM DDR3L 2Gbit Parallel 800 MHz 13.75ns FBGA96

Specifications

Description

The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

Key Timing Parameters

Features

• VDD = VDDQ = 1.35V (1.283 –1.45V)

• Backward-compatible to VDD = VDDQ = 1.5V ±0.075V

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 95°C

– 64ms, 8192-cycle refresh up to 85°C

– 32ms, 8192-cycle refresh at >85°C to 95°C

• Self refresh temperature (SRT)

Trading Guides

Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics, display modules, intelligent electronics, new energy, the Internet of things, 5G productsand other fields，With high-quality products, reasonable prices, rapid distributionand timely service, we can provide customers with the most cost-effective products and save customers a lot of time.