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Introducing the SCS210AM/C - the high-performing SiC Schottky diode engineered with Silicon Carbide technology that guarantees optimal efficiency and performance for your power system. With a maximum DC reverse voltage of 650V, and an average rectified current of 10A, this diode is your best choice for a wide range of applications, including PFC boost topology, secondary side rectification, data centers, and PV power conditioners.
One of the standout features of the SCS210AM/C is its 0ns reverse recovery time, making it responsive to your power needs. It also has no recovery time above 500mA, ensuring that it's capable of handling even high-frequency loads with ease, thanks to its capacitive rating of 365pF at 1V 1MHz. It's also incredibly easy to install, thanks to its through-hole mounting system and TO-220FM package/case. If you're looking for a reliable and high-performing diode for your power system, the SCS210AM/C is an excellent choice. Don't miss out on experiencing superior performance and efficiency in power conversion - upgrade your system with the SCS210AM/C today.
Category | Discrete Semiconductor Products |
Diodes - Rectifiers - Single | |
Package | Tube |
Part Status | Not For New Designs |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 10 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
Capacitance @ Vr, F | 365pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220FM |
Operating Temperature - Junction | 175°C (Max) |
Base Product Number | SCS210 |