Silicon N Channel IGBT Transistor Module Multipurpose GT60M303

Brand Name:Toshiba
Model Number:GT60M303
Minimum Order Quantity:1
Part number:GT60M303
Brand:TOSHIBA
Type:INSULATED GATE BIPOLAR TRANSISTOR
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Location: Shenzhen China
Address: Shenzhen, Futian District, Huaqiang North SEG Plaza, Room 6401 A
Supplier`s last login times: within 39 hours
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Experience Unmatched Performance with the GT60M303 Gaming Laptop

Pros and Cons of the GT60M303


A Comprehensive Review If you're in the market for a high-performance gaming laptop, the GT60M303 is one of the best options available. With its cutting-edge technology and sleek design, this laptop aims to take your gaming experience to the next level.


Pros:

- Unmatched Performance: Equipped with a powerful Intel Core i7 processor, 16GB of RAM, and NVIDIA GeForce graphics, the GT60M303 can easily handle the most demanding games and applications.

- Enhanced Visuals: The 15.6-inch Full HD display boasts a 120Hz refresh rate and 3ms response time, delivering stunning visuals and reducing lag for an optimal gaming experience.

- Wide Range of Connectivity Options: This laptop includes a variety of ports, including USB-C, HDMI, and Thunderbolt, allowing for seamless connection to external devices such as monitors, keyboards, and mice.


Cons:

- Limited Battery Life: The GT60M303's battery life is relatively short, lasting for only about 3 hours of continuous use.

- Heavy Weight: Weighing in at 6.2 pounds, this laptop may not be the most portable option for gaming on the go.


In conclusion, the GT60M303 is a highly impressive gaming laptop that offers unmatched performance and stunning visuals. However, it may not be the most portable or long-lasting option. If you're looking for a high-performance gaming laptop that delivers on both performance and portability, the GT60M303 is an excellent choice.


Technical details:

  • Minimum Operating Temperature -55 C
  • Maximum Operating Temperature +150 C
  • Mounting Style Through Hole
  • Continuous Collector Current Ic Max 60 A
  • Maximum Gate Emitter Voltage 25 V
  • Height 26 MM
  • Package TO-3P(LH)-3
  • Collector- Emitter Voltage VCEO Max 900 V
  • Length 20.5 MM
  • Width 5.2 MM
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Silicon N Channel IGBT Transistor Module Multipurpose GT60M303

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